Open main menu

JEOL JBX-6300FS Electron Beam Lithography System

The JBX-6300FS, equipped with a thermal field emission electron gun with a ZrO/W emitter, is an electron beam lithography system provided with the Vector Scan Method for beam deflection. The beam deflection employs 19-bit DAC, and an accelerating voltage of 100kV. The workpiece stage is driven by the step-and repeat-method, and substrates from 5 mm X 5 mm pieces up to 200 mm wafer can be loaded. An auto-loader is provided for continuous unattended operation of up to 10 cassettes.

JEOL JBX-6300FS Electron Beam Lithography System
52011.jpg
Equipment Details
Technology Electron beam lithography
Materials Restriction General
Material Processed Semiconductors, Metals, Dielectrics
Chemicals Used PMMA, ZEP, SML Series, HSQ
Equipment Manual
Overview System Overview
Operating Procedure SOP
Supported Processes Supported Processes
User Processes User Processes
Maintenance Maintenance


The operation system (OS) of the computer for lithography control and JOB making are done in UNIX. Combination of UNIX and GUI (Graphical User Interface) has realized a high operation efficiency.

Contents

Announcements

  • There are no tool related announcements at this time
The tool is available in the high resolution writing (5th lens) mode on Mondays and high speed writing (4th lens) mode for other days

[NEW] JEOL E-Beam Fast Writing Option

For users that are interested in patterning features that are beyond the capabilities of the GCA Stepper, a new fast writing option is now available on the JEOL electron-beam lithography system that uses a high probe current to reduce patterning time by an order of magnitude. Typical features that can be patterned with this condition are between 200 nm and 500 nm. Etching and lift-off processes are achievable. Please email Vishva Ray (vpray@umich.edu) or create a Helpdesk Ticket for more information.

 
SEM images of probes patterned in the JEOL using high probe current mode. The samples are imaged after depositing 50nm of Au and lift-off. 950K A4 PMMA was used as the resist

Capabilities/Writing Performance

  1. Minimum Feature Size:
    • 100 kV (high precision writing mode): ≤ 8 nm (at field center)
    • 100 kV (high speed writing mode): ≈ 50 nm
  2. Overlay Accuracy:
    • High resolution writing mode ≤ ± 20 nm
    • High speed writing mode ≤ ± 35 nm
  3. Field Stitching Accuracy:
    • High resolution writing mode ≤ ± 20 nm
    • High speed writing mode ≤ ± 30 nm
  4. Beam positioning accuracy:
    • High resolution writing mode = 0.125 nm
    • High speed writing mode = 2 nm
  5. Writing Functions:
    • Direct writing and overlay writing: Overlapping with detection of marks on wafer
    • Mask making: Exposure on mask blanks
    • Character writing: Letters, numerals, and 24 symbols
    • Character size: 1 mm X 1 mm
    • Character lines: Up to 4
    • Cyclic correction exposure: Dose correction, Beam position correction, Beam deflection system correction
  6. Non-planar substrate patterning:
    • Max. height variation of non-planar substrate = 10 mm
    • Min. feature size ≥ 50 nm

System Overview

Hardware Details

  1. Electron beam:
    • Beam shape: Spot beam
    • Accelerating voltage: 100 kV
    • Beam current: 500 pA to 20 nA
    • Minimum beam size: ≤ 2.9 nm (high resolution writing mode at 100 kV)
  2. Beam Deflection:
    • Method: Vector scan
    • Writing field in high speed writing mode: 1 mm X 1 mm
    • Writing field in high precision writing mode: 62.5 µm X 62.5 µm
    • Beam positioning DAC: 19 bits
    • Beam scanning DAC: 12 bits
    • Beam scanning speed: 50 MHz
  3. Stage Movement:
    • Method: Step and repeat
    • Stage position measurement: Laser interferometer
    • Positional step size: λ/1024 (0.62 nm)
    • Stage movement range: 190 X 170 mm
    • Writing area: 150 X 150 mm
    • Movement speed: Up to 10 mm/s
  4. Material Transfer:
    • Autoloader with 10-cassette loading system

Substrate Requirements

  • Piece parts from 5 mm X 5 mm to 150 mm wafers; 5" and 6" mask blanks
  • Si, III-V, Metals, Dielectrics are allowed
  • Substrates must be mounted directly on to the proper cassette
Use Teflon tweezers only for mounting and unmounting substrates
Unbaked polymers/adhesives, conductive silver paste, liquids, oils, and anything that will out-gas or decrepitate under vacuum is prohibited
It is recommended that insulators and polymers be coated with a top layer of water soluble conductive polymer or a thin layer of thermally evaporated metal e.g., Au or Al to avoid charging during patterning
  • Substrate thickness ≤ 1 mm

Material Restrictions

The JEOL JBX-6300FS Electron Beam Lithography System is designated as a General class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.


Supported Processes

There are no Standard Processes for the JEOL JBX-6300FS Electron Beam Lithography system. However, it is extremely important to use the correct combination of resist thickness, instrument condition, beam current, e-beam dose, and shot pitch in order to achieve good lithography results. To establish your process, please contact the tool engineer. PMMA, ZEP, SML Series, and HSQ resists are allowed. For other resists and materials compatibility, please contact the tool engineer.

In addition to these, this tool has a number of user-created recipes for etching a wide variety of materials. Some of these recipes are documented on JEOL JBX-6300FS Electron Beam Lithography System User Processes. If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system.

Standard Operating Procedure

Widget text will go here.

Manual Focusing Procedure

Widget text will go here.

Checkout Procedure

  1. Make an appointment with the tool engineer via a Helpdesk Ticket to discuss your lithography needs.
  2. Read through this page and the Standard Operating Procedure above.
  3. Create a Helpdesk Ticket requesting training.
  4. A tool engineer will schedule a time for initial training.
  5. Practice with the tool engineer until you are comfortable with tool operation. It usually takes between 4 to 8 practice sessions depending on the complexity of the process.
  6. Schedule a checkout session with a tool engineer via the Helpdesk Ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Maintenance

Users are not allowed to carry out maintenance on the JEOL JBX-6300FS Electron Beam Lithography System. The tool is under a service contract and most major repairs and scheduled maintenance is done by OEM service engineers. This includes but is not limited to:

  • Field emitter replacement and conditioning
  • Vacuum system maintenance
  • Filament temperature adjustments
  • Chiller service

The tool engineer performs standard maintenance that includes but is not limited to:

  • Column alignment
  • Switching between high speed writing (4th lens) and high resolution writing (5th lens) modes
The tool is available in the high resolution writing mode on Mondays and high speed writing mode for other days
  • Adjusting probe current, beam focus, and astigmatism
  • Automatic height sensor tuning
  • Moving beam to new positions for absorbed electron (AE) and backscattered electron (BE) detection