Difference between revisions of "LAM 9400"

From LNF Wiki
Jump to navigation Jump to search
Line 3: Line 3:
 
{{#vardefine:toolid|10020}} {{#vardefine:technology|RIE}} {{#vardefine:restriction|2}}
 
{{#vardefine:toolid|10020}} {{#vardefine:technology|RIE}} {{#vardefine:restriction|2}}
 
{{infobox equipment
 
{{infobox equipment
 +
|caption= LAM 9400 SE
 
|materials = [[Silicon|Si]], [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]],  
 
|materials = [[Silicon|Si]], [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]],  
 
Polymers, Reactive Metals
 
Polymers, Reactive Metals

Revision as of 10:05, 21 April 2015


LAM 9400
10020.jpg
LAM 9400 SE
Equipment Details
Technology RIE
Materials Restriction Semi-Clean
Material Processed

Si, SiO2, Si3N4,

Polymers, Reactive Metals
Mask Materials PR, SiO2
Sample Size 6 inch (150 mm)
Gases Used

Ar, BCl3, C4F8, Cl2,

He, HBr, O2, SF6
Equipment Manual
Overview System Overview
Operating Procedure SOP
Supported Processes Supported Processes
User Processes User Processes


The LAM 9400 SE is a high density plasma etch tool manufactured by LAM Research Corporation. This tool was originally designed for production polysilicon etching, but has been reconfigured for silicon based materials, III‐Vs, some metals, and organic materials. It uses a TCP (transformer coupled plasma), which is a special patented form of an ICP source to enhance plasma density. It also has a bias power supply for controlling ion bombardment energy.

Capabilities

  • Moderate Etch Rates ~1000-2000 Å/min
  • Sub-micron Features 1-2 µm deep
  • Wide Range of Materials

System Overview

Hardware Details

  • Gases
    • Ar - 150 sccm
    • BCl3 - 50 sccm
    • C4F8 - 100 sccm
    • Cl2 - 200 sccm
    • He - 200 sccm
    • HBr - 200 sccm
    • O2 - 100 sccm
    • SF6 - 100 sccm
  • Pressure
    • 1000 L/sec Seiko Seiki STP-H1000C Turbo Pump
    • 2-100 mTorr
    • Series 64 VAT Valve
  • Electrostatic Chuck
    • 150mm Wafer
    • 0-50 Torr Backside He Cooling
    • 50°C Standard Temp (-40°C to 80°C Range)
    • 750 V Bipolar
  • Chamber
    • 50°C Walls
    • Anodized Aluminum Walls
  • RF
    • 1250 W 13.56 Mhz TPC - (800 W Max)
    • 1250 W 13.56 Mhz Bias - (300 W Max)

Substrate Requirements

  • 150 mm (6") wafers
  • 1 Major Flat
  • 3 mm Max Height

Material Restrictions

The LAM 9400 is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.


Supported Processes

There are several processes for this tool supported by the LNF, which are described in more detail on the Processes page.

In addition to these, this tool has a number of user-created recipes for etching a wide variety of materials. Some of these recipes are documented on LAM 9400 User Processes. If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system.

Standard Operating Procedure

Widget text will go here.

Checkout Procedure

  1. Read through the Standard Operating Procedure above.
  2. Complete the training request form here.
  3. Create a helpdesk ticket requesting training.
  4. A tool engineer will schedule a time for initial training.
  5. Practice with your mentor or another authorized user until you are comfortable with tool operation.
  6. Complete the SOP quiz here.
  7. Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Tool Qualification

MNF_Oxide1

To verify the condition of the tool, a bi-weekly blanket Oxide 120 sec etch is run and the etch rate recorded. This chart shows the etch rate over time.