LAM 9400

The LAM 9400 is a high density plasma etch tool manufactured by LAM Research Corporation. It uses a TCP (transformer coupled plasma), which is a special patented form of an ICP source to create plasma density. It also has a bias source for controlling ion bombardment energy. The tool is equipped with a electrostatic chuck which is temperature controlled to maintain the temperature of the wafer during the high heat loads of the plasma.

This tool was originally designed for production polysilicon etching. Endpoint detection and highly selective etch processes allow stopping on very thin underlying oxide layers. The tool has been reconfigured with a wide array of gases and has proven effective for etching a comprehensive list of materials. This extensive gas list also allows for significant tailoring of etch properties for an individual material. Each recipe has an associated chamber clean which is performed before each wafer. Currently users may etch Silicon based materials, III‐Vs, metals, and organic materials. Etches of submicron features to depths of 1 or 2 microns are routinely achieved. 50nm features or depths of 3 microns (not at the same time) have been performed with some materials.

• LAM 9400/Processes
• LAM 9400/Processes/LNF Al2O3
• LAM 9400/Processes/LNF Aluminum
• LAM 9400/Processes/LNF HfO2
• LAM 9400/Processes/LNF Poly
• LAM 9400/Processes/LNF TiN sel Al2O3
• LAM 9400/Processes/LNF Ti thin
• LAM 9400/Processes/POLY ETCH 2
• LAM 9400/Processes/mnf nitride1
• LAM 9400/Processes/mnf oxide1
• LAM 9400/Processes/mnf oxynite2

Announcements

• [2014-10-03] - PFPE removed from mounting table, if needed please create a help desk ticket
• [2014-07-31] - New SOP Released

System Overview

Tool Capabilities/Limitations

• Harware Details
  • TCP inductive RF plasma source ‐ 1000 Watts Max
  • Separate bias RF power source – 300 Watts Max
  • Electrostatic Chuck
    • 750V Bipolar
    • Temperature controlled 30°C to 80°C
    • Backside helium cooling
  • All dry pumping system
  • Process pressure range: 2mT to 100mT
  • Heated chamber
  • Entry and exit load lock chambers
  • Processes cassette to cassette
  • Gases: HBr, Cl2, O2, SF6, C4F8, He, Ar, BCl3
  • Materials: SiliconSi, Silicon NitrideSi3N4, SiO2, III‐Vs, Cr, Aluminum, Molybdenum, organics

• Capabilities
  • Resolution?
  • Aspect Ratio?
  • Etch Depth?

Substrate Requirements

• 6" round
• Must have a wafer flat
• Up to 3 mm substrate thickness
• All Pieces and 4" wafers must be mounted to a carrier wafer

Material Restrictions

Below is a list of approved and restricted materials for the tool. "Approved" means the material is allowed in the tool under normal circumstances. "Not Allowed" means the material may never be used in the tool. If a material is not listed, it may be possible to use the material under certain conditions. Please contact a tool engineer via the helpdesk ticket system for any material requests or questions.

Supported Processes

There are several recipes supported by the LNF, including an oxide etch, nitride etch, and polysilicon etch. For more details, see LAM 9400 Processes.

In addition to these, this tool has a number of user-created recipes for etching a wide variety of materials. Some of these recipes are documented on LNF_User:LAM 9400 User Processes. If you are curious if your material can be etched in this tool, please contact the tool engineers via the helpdesk ticket system.

Checkout Procedure

1. Read through the Standard Operating Procedure above or here
2. Complete the training request form here.
3. Create a helpdesk ticket requesting training.
4. A tool engineer will schedule a time for initial training.
5. Practice with your mentor or another authorized user until you are comfortable with tool operation.
6. Complete the SOP quiz here
7. Schedule a checkout session with a tool engineer. If this checkout is successful, the engineer will authorize you on the tool.

Tool Qualification

MNF_Oxide1

To verify the condition of the tool, a weekly blanket oxide etch is run and the etch rate recorded. This chart shows the etch rate over time.