Difference between revisions of "LAM 9400/Processes/LNF Al2O3"
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(Created page with "<!-- Make sure to add any other relevant categories --> {{Infobox process |technology = RIE |material = Al<sub>2</sub>O<sub>3</sub> |mask = Photoresist, SiO<sub>2</sub> |gases...") |
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|mask = Photoresist, SiO<sub>2</sub> | |mask = Photoresist, SiO<sub>2</sub> | ||
|gases = BCl<sub>3</sub>, HBr | |gases = BCl<sub>3</sub>, HBr | ||
| − | | | + | |created = December 2020 |
|authors = Shawn Wright | |authors = Shawn Wright | ||
}} | }} | ||
Revision as of 10:32, 7 December 2020
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Al2O3 |
| Mask Materials | Photoresist, SiO2 |
| Gases Used | BCl3, HBr |
| Date Created | December 2020 |
| Authored By | Shawn Wright |
This is the breakthrough step from LNF_Aluminum.
Etch Rates
These were measured using 1cm pieces on a 6" Si carrier.
Main Etch
- ALD Al2O3: 28 nm/min
- SPR: 29.6 nm/min
- PMMA: 73.4 nm/min
- ZEP: 49.4 nm/min
- SiO2: 48.4 nm/min
- GaN (N-Polar): 18.7 nm/min
- Aluminum: 88 nm/min
Parameters
| Parameter | Main Etch |
|---|---|
| Pressure | 5 mTorr |
| TCP Power | 600 W |
| Bias Power | 50 W |
| HBr Flow | 25 sccm |
| BCl3 Flow | 25 sccm |
| Time | Variable |
