LAM 9400/Processes/LNF Al2O3

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About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Al2O3
Mask Materials Photoresist, SiO2
Gases Used BCl3, HBr
Date Created {{{created}}}
Authored By Shawn Wright

This is the breakthrough step from LNF_Aluminum.

Etch Rates

These were measured using 1cm pieces on a 6" Si carrier.

Main Etch

  • ALD Al2O3: 28 nm/min
  • SPR: 29.6 nm/min
  • PMMA: 73.4 nm/min
  • ZEP: 49.4 nm/min
  • SiO2: 48.4 nm/min
  • GaN (N-Polar): 18.7 nm/min
  • Aluminum: 88 nm/min

Parameters

Parameter Main Etch
Pressure 5 mTorr
TCP Power 600 W
Bias Power 50 W
HBr Flow 25 sccm
BCl3 Flow 25 sccm
Time Variable
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