LAM 9400/Processes/LNF Al2O3
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| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Al2O3 |
| Mask Materials | Photoresist, SiO2 |
| Gases Used | BCl3, HBr |
| Date Created | December 2020 |
| Authored By | Shawn Wright |
This is intended for etching Al2O3, and is the same as the breakthrough step in LNF_Aluminum.
Etch Rates
These were measured using 1cm pieces on a 6" Si carrier.
Main Etch
- ALD Al2O3: 28 nm/min
- SPR: 29.6 nm/min
- PMMA: 73.4 nm/min
- ZEP: 49.4 nm/min
- SiO2: 48.4 nm/min
- GaN (N-Polar): 18.7 nm/min
- Aluminum: 88 nm/min
Parameters
| Parameter | Main Etch |
|---|---|
| Pressure | 5 mTorr |
| TCP Power | 600 W |
| Bias Power | 50 W |
| HBr Flow | 25 sccm |
| BCl3 Flow | 25 sccm |
| Time | Variable |
