Difference between revisions of "LAM 9400/Processes/LNF Aluminum"

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|created = November 2018
 
|created = November 2018
 
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|authors = Ashley Jian Shawn Wright
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|authors = Ashley Jian & Shawn Wright
 
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[[Category:Processes]] [[Category:RIE]]
 
[[Category:Processes]] [[Category:RIE]]

Revision as of 09:17, 18 December 2018


About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Aluminum
Mask Materials PR
Gases Used BCl3, HBr
Date Created November 2018
Authored By Ashley Jian & Shawn Wright

This is a fast anisotropic aluminum etch.

Etch Rates

Main Etch

These were measured using 1cm pieces on a 6" Si carrier.

  • Aluminum: 536 nm/min
  • ALD Al2O3: 11 nm/min (49:1)
  • SPR: 41 nm/min (13:1)
  • SiO2: 36 nm/min (15:1)
  • PMMA: 36 nm/min (15:1)
  • ZEP: 29 nm/min (18:1)


Break Through

The breakthrough step is typically set to ~10 seconds, or enough time to get through any native oxide on the aluminum.

  • Aluminum: 88 nm/min
  • ALD Al2O3: 28 nm/min
  • SPR: 29.6 nm/min
  • SiO2: 48.4 nm/min
  • PMMA: 73.4 nm/min
  • ZEP: 49.4 nm/min




Parameters

Parameter Break Through Main Etch
Pressure 5 mTorr 20 mTorr
TCP Power 600 W 600 W
Bias Power 50 W 50 W
HBr Flow 25 sccm 40 sccm
BCl3 Flow 25 sccm 10 sccm
Time 10 sec (typ) Variable