Difference between revisions of "LAM 9400/Processes/LNF Aluminum"
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==Etch Rates== | ==Etch Rates== | ||
| + | These were measured using 1cm pieces on a 6" Si carrier. At this point we have limited data on how stable these etch rates are. | ||
| + | |||
===Main Etch=== | ===Main Etch=== | ||
| − | |||
* Aluminum: 536 nm/min | * Aluminum: 536 nm/min | ||
* ALD Al2O3: 11 nm/min (49:1) | * ALD Al2O3: 11 nm/min (49:1) | ||
Revision as of 09:37, 18 December 2018
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Aluminum |
| Mask Materials | Photoresist, SiO2 |
| Gases Used | BCl3, HBr |
| Date Created | November 2018 |
| Authored By | Ashley Jian & Shawn Wright |
This is a fast anisotropic aluminum etch.
Etch Profile
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Etch Rates
These were measured using 1cm pieces on a 6" Si carrier. At this point we have limited data on how stable these etch rates are.
Main Etch
- Aluminum: 536 nm/min
- ALD Al2O3: 11 nm/min (49:1)
- SPR: 41 nm/min (13:1)
- SiO2: 36 nm/min (15:1)
- PMMA: 36 nm/min (15:1)
- ZEP: 29 nm/min (18:1)
Break Through
The breakthrough step is typically set to ~10 seconds, or enough time to get through any native oxide on the aluminum.
- Aluminum: 88 nm/min
- ALD Al2O3: 28 nm/min
- SPR: 29.6 nm/min
- SiO2: 48.4 nm/min
- PMMA: 73.4 nm/min
- ZEP: 49.4 nm/min
Parameters
| Parameter | Break Through | Main Etch |
|---|---|---|
| Pressure | 5 mTorr | 20 mTorr |
| TCP Power | 600 W | 600 W |
| Bias Power | 50 W | 50 W |
| HBr Flow | 25 sccm | 40 sccm |
| BCl3 Flow | 25 sccm | 10 sccm |
| Time | 10 sec (typ) | Variable |
