Difference between revisions of "LAM 9400/Processes/LNF Aluminum"
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(Created page with "<!-- Make sure to add any other relevant categories --> {{Infobox process |technology = RIE |material = Aluminum |mask = PR |gases = BCl<sub>3</sub>, HBr |crea...") |
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|technology = RIE | |technology = RIE | ||
|material = Aluminum | |material = Aluminum | ||
| − | |mask = | + | |mask = Photoresist, SiO<sub>2</sub> |
|gases = BCl<sub>3</sub>, HBr | |gases = BCl<sub>3</sub>, HBr | ||
|created = November 2018 | |created = November 2018 | ||
|modified = | |modified = | ||
| − | | | + | |authors = Ashley Jian & Shawn Wright |
| − | [[Category:Processes]] [[Category:RIE]] | + | }} |
| + | [[Category:Processes]] | ||
| + | [[Category:RIE]] | ||
This is a fast anisotropic aluminum etch. | This is a fast anisotropic aluminum etch. | ||
| + | |||
| + | ==Etch Profile== | ||
| + | {| class="wikitable" | ||
| + | |[[File:LAM_9400_Aluminum_500nm.png|frameless|left]] | ||
| + | |[[File:LAM_9400_Aluminum_700nm.png|frameless|left]] | ||
| + | |[[File:LAM_9400_Aluminum_3000nm.png|frameless|left]] | ||
| + | |} | ||
==Etch Rates== | ==Etch Rates== | ||
| + | These were measured using 1cm pieces on a 6" Si carrier. At this point we have limited data on how stable these etch rates are. | ||
| + | |||
===Main Etch=== | ===Main Etch=== | ||
| − | |||
| − | |||
| − | |||
| − | * SPR: 41 nm/min (13:1) | + | *Aluminum: 536 nm/min |
| − | * SiO2: 36 nm/min (15:1) | + | *ALD Al2O3: 11 nm/min (49:1) |
| − | * PMMA: 36 nm/min (15:1) | + | |
| − | * ZEP: 29 nm/min (18:1) | + | *SPR: 41 nm/min (13:1) |
| + | *SiO2: 36 nm/min (15:1) | ||
| + | *PMMA: 36 nm/min (15:1) | ||
| + | *ZEP: 29 nm/min (18:1) | ||
===Break Through=== | ===Break Through=== | ||
The breakthrough step is typically set to ~10 seconds, or enough time to get through any native oxide on the aluminum. | The breakthrough step is typically set to ~10 seconds, or enough time to get through any native oxide on the aluminum. | ||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| − | |||
| + | *Aluminum: 88 nm/min | ||
| + | *ALD Al2O3: 28 nm/min | ||
| + | *SPR: 29.6 nm/min | ||
| + | *SiO2: 48.4 nm/min | ||
| + | *PMMA: 73.4 nm/min | ||
| + | *ZEP: 49.4 nm/min | ||
| + | *GaN (N-Polar): 18.7 nm/min | ||
| + | === SF<sub>6</sub> Ash === | ||
| + | This is a short ashing step intended to replace Cl embedded in the sidewalls of the features with F in order to reduce how much corrosion happens when the sample encounters moisture in the air. Even small amounts of Cl on the surface of aluminum can form a HCl corrosion cell that can continually corrode aluminum. Below is an example of HCl corrosion on aluminum. It can also help to go from the etch directly into a DI water tank or QDR to attempt to rinse off any HCl. | ||
| + | [[File:Aluminum corrosion on lines.jpg|frameless|300x300px]] | ||
==Parameters== | ==Parameters== | ||
{| class="wikitable" border="1" style="text-align: center" | {| class="wikitable" border="1" style="text-align: center" | ||
|- | |- | ||
| − | ! Parameter | + | !Parameter |
| − | ! Break Through | + | !Break Through |
| − | ! Main Etch | + | !Main Etch |
| + | !SF<sub>6</sub> Ash | ||
|- | |- | ||
|Pressure | |Pressure | ||
| − | | 5 mTorr | + | |5 mTorr |
| − | | 20 mTorr | + | |20 mTorr |
| + | |20 mTorr | ||
| + | |- | ||
| + | |TCP Power | ||
| + | |600 W | ||
| + | |600 W | ||
| + | |400 W | ||
| + | |- | ||
| + | |Bias Power | ||
| + | |50 W | ||
| + | |50 W | ||
| + | | - | ||
| + | |- | ||
| + | |HBr Flow | ||
| + | |25 sccm | ||
| + | |40 sccm | ||
| + | | - | ||
|- | |- | ||
| − | | | + | |BCl<sub>3</sub> Flow |
| − | | | + | |25 sccm |
| − | | | + | |10 sccm |
| + | | - | ||
|- | |- | ||
| − | | | + | |SF<sub>6</sub> Flow |
| − | | | + | | - |
| − | | | + | | - |
| + | |90 sccm | ||
|- | |- | ||
| − | | | + | |O<sub>2</sub> Flow |
| − | | | + | | - |
| − | | 10 sccm | + | | - |
| + | |10 sccm | ||
|- | |- | ||
| − | | | + | |Time |
| − | | | + | |10 sec (typ) |
| − | | | + | |Variable |
| + | |20 sec (typ) | ||
|} | |} | ||
Latest revision as of 10:27, 7 December 2020
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Aluminum |
| Mask Materials | Photoresist, SiO2 |
| Gases Used | BCl3, HBr |
| Date Created | November 2018 |
| Authored By | Ashley Jian & Shawn Wright |
This is a fast anisotropic aluminum etch.
Etch Profile
 |
 |
 |
Etch Rates
These were measured using 1cm pieces on a 6" Si carrier. At this point we have limited data on how stable these etch rates are.
Main Etch
- Aluminum: 536 nm/min
- ALD Al2O3: 11 nm/min (49:1)
- SPR: 41 nm/min (13:1)
- SiO2: 36 nm/min (15:1)
- PMMA: 36 nm/min (15:1)
- ZEP: 29 nm/min (18:1)
Break Through
The breakthrough step is typically set to ~10 seconds, or enough time to get through any native oxide on the aluminum.
- Aluminum: 88 nm/min
- ALD Al2O3: 28 nm/min
- SPR: 29.6 nm/min
- SiO2: 48.4 nm/min
- PMMA: 73.4 nm/min
- ZEP: 49.4 nm/min
- GaN (N-Polar): 18.7 nm/min
SF6 Ash
This is a short ashing step intended to replace Cl embedded in the sidewalls of the features with F in order to reduce how much corrosion happens when the sample encounters moisture in the air. Even small amounts of Cl on the surface of aluminum can form a HCl corrosion cell that can continually corrode aluminum. Below is an example of HCl corrosion on aluminum. It can also help to go from the etch directly into a DI water tank or QDR to attempt to rinse off any HCl.
Parameters
| Parameter | Break Through | Main Etch | SF6 Ash |
|---|---|---|---|
| Pressure | 5 mTorr | 20 mTorr | 20 mTorr |
| TCP Power | 600 W | 600 W | 400 W |
| Bias Power | 50 W | 50 W | - |
| HBr Flow | 25 sccm | 40 sccm | - |
| BCl3 Flow | 25 sccm | 10 sccm | - |
| SF6 Flow | - | - | 90 sccm |
| O2 Flow | - | - | 10 sccm |
| Time | 10 sec (typ) | Variable | 20 sec (typ) |
