Difference between revisions of "LAM 9400/Processes/LNF Aluminum"

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|authors = Ashley Jian & Shawn Wright
 
|authors = Ashley Jian & Shawn Wright
 
}}
 
}}
[[Category:Processes]] [[Category:RIE]]
+
[[Category:Processes]]  
 +
[[Category:RIE]]
  
 
This is a fast anisotropic aluminum etch.
 
This is a fast anisotropic aluminum etch.
Line 15: Line 16:
 
==Etch Profile==
 
==Etch Profile==
 
{| class="wikitable"
 
{| class="wikitable"
| [[File:LAM_9400_Aluminum_500nm.png|frameless|left]]
+
|[[File:LAM_9400_Aluminum_500nm.png|frameless|left]]
| [[File:LAM_9400_Aluminum_700nm.png|frameless|left]]
+
|[[File:LAM_9400_Aluminum_700nm.png|frameless|left]]
| [[File:LAM_9400_Aluminum_3000nm.png|frameless|left]]
+
|[[File:LAM_9400_Aluminum_3000nm.png|frameless|left]]
 
|}
 
|}
  
 
==Etch Rates==
 
==Etch Rates==
 +
These were measured using 1cm pieces on a 6" Si carrier.  At this point we have limited data on how stable these etch rates are.
 +
 
===Main Etch===
 
===Main Etch===
These were measured using 1cm pieces on a 6" Si carrier.
 
* Aluminum: 536 nm/min
 
* ALD Al2O3: 11 nm/min (49:1)
 
  
* SPR: 41 nm/min (13:1)
+
*Aluminum: 536 nm/min
* SiO2: 36 nm/min (15:1)
+
*ALD Al2O3: 11 nm/min (49:1)
* PMMA: 36 nm/min (15:1)
+
 
* ZEP: 29 nm/min (18:1)
+
*SPR: 41 nm/min (13:1)
 +
*SiO2: 36 nm/min (15:1)
 +
*PMMA: 36 nm/min (15:1)
 +
*ZEP: 29 nm/min (18:1)
  
  
 
===Break Through===
 
===Break Through===
 
The breakthrough step is typically set to ~10 seconds, or enough time to get through any native oxide on the aluminum.
 
The breakthrough step is typically set to ~10 seconds, or enough time to get through any native oxide on the aluminum.
* Aluminum:  88 nm/min
 
* ALD Al2O3:  28 nm/min
 
  
* SPR: 29.6 nm/min
+
*Aluminum:  88 nm/min
* SiO2: 48.4 nm/min
+
*ALD Al2O3:  28 nm/min
* PMMA: 73.4 nm/min
+
 
* ZEP: 49.4 nm/min
+
*SPR: 29.6 nm/min
 +
*SiO2: 48.4 nm/min
 +
*PMMA: 73.4 nm/min
 +
*ZEP: 49.4 nm/min
 +
*GaN (N-Polar): 18.7 nm/min
 +
 
 +
=== SF<sub>6</sub> Ash ===
 +
This is a short ashing step intended to replace Cl embedded in the sidewalls of the features with F in order to reduce how much corrosion happens when the sample encounters moisture in the air.  Even small amounts of Cl on the surface of aluminum can form a HCl corrosion cell that can continually corrode aluminum. Below is an example of HCl corrosion on aluminum.  It can also help to go from the etch directly into a DI water tank or QDR to attempt to rinse off any HCl.
 +
 
 +
[[File:Aluminum corrosion on lines.jpg|frameless|300x300px]]
  
 
==Parameters==
 
==Parameters==
 
{| class="wikitable" border="1" style="text-align: center"
 
{| class="wikitable" border="1" style="text-align: center"
 
|-
 
|-
! Parameter
+
!Parameter
! Break Through
+
!Break Through
! Main Etch
+
!Main Etch
 +
!SF<sub>6</sub> Ash
 
|-
 
|-
 
|Pressure
 
|Pressure
| 5 mTorr
+
|5 mTorr
| 20 mTorr
+
|20 mTorr
 +
|20 mTorr
 +
|-
 +
|TCP Power
 +
|600 W
 +
|600 W
 +
|400 W
 +
|-
 +
|Bias Power
 +
|50 W
 +
|50 W
 +
| -
 
|-
 
|-
| TCP Power
+
|HBr Flow
| 600 W
+
|25 sccm
| 600 W
+
|40 sccm
 +
| -
 
|-
 
|-
| Bias Power
+
|BCl<sub>3</sub> Flow
| 50 W
+
|25 sccm
| 50 W
+
|10 sccm
 +
| -
 
|-
 
|-
| HBr Flow
+
|SF<sub>6</sub> Flow
| 25 sccm
+
| -
| 40 sccm
+
| -
 +
|90 sccm
 
|-
 
|-
| BCl<sub>3</sub> Flow
+
|O<sub>2</sub> Flow
| 25 sccm
+
| -
| 10 sccm
+
| -
 +
|10 sccm
 
|-
 
|-
| Time
+
|Time
| 10 sec (typ)
+
|10 sec (typ)
| Variable
+
|Variable
 
+
|20 sec (typ)
 
|}
 
|}

Latest revision as of 10:27, 7 December 2020


About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Aluminum
Mask Materials Photoresist, SiO2
Gases Used BCl3, HBr
Date Created November 2018
Authored By Ashley Jian & Shawn Wright

This is a fast anisotropic aluminum etch.

Etch Profile

LAM 9400 Aluminum 500nm.png
LAM 9400 Aluminum 700nm.png
LAM 9400 Aluminum 3000nm.png

Etch Rates

These were measured using 1cm pieces on a 6" Si carrier. At this point we have limited data on how stable these etch rates are.

Main Etch

  • Aluminum: 536 nm/min
  • ALD Al2O3: 11 nm/min (49:1)
  • SPR: 41 nm/min (13:1)
  • SiO2: 36 nm/min (15:1)
  • PMMA: 36 nm/min (15:1)
  • ZEP: 29 nm/min (18:1)


Break Through

The breakthrough step is typically set to ~10 seconds, or enough time to get through any native oxide on the aluminum.

  • Aluminum: 88 nm/min
  • ALD Al2O3: 28 nm/min
  • SPR: 29.6 nm/min
  • SiO2: 48.4 nm/min
  • PMMA: 73.4 nm/min
  • ZEP: 49.4 nm/min
  • GaN (N-Polar): 18.7 nm/min

SF6 Ash

This is a short ashing step intended to replace Cl embedded in the sidewalls of the features with F in order to reduce how much corrosion happens when the sample encounters moisture in the air. Even small amounts of Cl on the surface of aluminum can form a HCl corrosion cell that can continually corrode aluminum. Below is an example of HCl corrosion on aluminum. It can also help to go from the etch directly into a DI water tank or QDR to attempt to rinse off any HCl.

Aluminum corrosion on lines.jpg

Parameters

Parameter Break Through Main Etch SF6 Ash
Pressure 5 mTorr 20 mTorr 20 mTorr
TCP Power 600 W 600 W 400 W
Bias Power 50 W 50 W -
HBr Flow 25 sccm 40 sccm -
BCl3 Flow 25 sccm 10 sccm -
SF6 Flow - - 90 sccm
O2 Flow - - 10 sccm
Time 10 sec (typ) Variable 20 sec (typ)