Difference between revisions of "LAM 9400/Processes/LNF HfO2"
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[[Category:Processes]] [[Category:RIE]] | [[Category:Processes]] [[Category:RIE]] | ||
| − | {{note|This process requires more than the standard chamber clean.| | + | {{note|This process requires more than the standard chamber clean.|error}} |
This recipe is designed to etch HfO<sub>2</sub>. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl<sub>4</sub> which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process. | This recipe is designed to etch HfO<sub>2</sub>. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl<sub>4</sub> which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process. | ||
| + | ==Procedure== | ||
| + | # Run etch | ||
| + | # Run Wafer_Clean_SiCl4 for 5 min on a blank Si wafer | ||
| − | == | + | ==Characterization== |
| − | |||
| − | |||
===Main Etch=== | ===Main Etch=== | ||
| + | Measured using pieces mounted to a 6" Si carrier. | ||
* HfO<sub>2</sub> (250°C deposition): 29 nm/min | * HfO<sub>2</sub> (250°C deposition): 29 nm/min | ||
| − | * HfO<sub>2</sub> (250°C deposition, annealed): 21 nm/min | + | * HfO<sub>2</sub> (250°C deposition, annealed at 400°C for 1 min): 21 nm/min |
* GaN: 2.2 nm/min (13:1) | * GaN: 2.2 nm/min (13:1) | ||
| − | * SPR 955: | + | * SPR 955: 12.3 nm/min |
| − | * ZEP: | + | * ZEP: 11.9 nm/min |
| − | * PMMA: | + | * PMMA: 24.7 nm/min |
| − | * SiO<sub>2</sub>: | + | |
| + | Measured as a blanket film on a 6" wafer: | ||
| + | * SiO<sub>2</sub>: 13.8 nm/min | ||
==Parameters== | ==Parameters== | ||
| Line 53: | Line 57: | ||
==References== | ==References== | ||
| − | # Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and | + | # Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188. |
Latest revision as of 10:04, 8 November 2021
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | HfO2 |
| Mask Materials | Photoresist |
| Gases Used | BCl3 |
| Date Created | October 2021 |
| Authored By | Shawn Wright, Subhajit Mohanty |
This process requires more than the standard chamber clean.
This recipe is designed to etch HfO2. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl4 which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.
Procedure
- Run etch
- Run Wafer_Clean_SiCl4 for 5 min on a blank Si wafer
Characterization
Main Etch
Measured using pieces mounted to a 6" Si carrier.
- HfO2 (250°C deposition): 29 nm/min
- HfO2 (250°C deposition, annealed at 400°C for 1 min): 21 nm/min
- GaN: 2.2 nm/min (13:1)
- SPR 955: 12.3 nm/min
- ZEP: 11.9 nm/min
- PMMA: 24.7 nm/min
Measured as a blanket film on a 6" wafer:
- SiO2: 13.8 nm/min
Parameters
| Parameter | Main Etch |
|---|---|
| Pressure | 5 mTorr |
| TCP Power | 400 W |
| Bias Power | 20 W |
| Vpk-pk | ~34 V |
| BCl3 Flow | 30 sccm |
| Time | < 5 min |
References
- Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.
