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This recipe is designed to etch HfO<sub>2</sub>. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl<sub>4</sub> which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process. | This recipe is designed to etch HfO<sub>2</sub>. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl<sub>4</sub> which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process. | ||
| + | ==Procedure== | ||
| + | # Run etch | ||
| + | # Run Wafer_Clean_SiCl4 for 5 min on a blank Si wafer | ||
| − | == | + | ==Characterization== |
| − | |||
| − | |||
===Main Etch=== | ===Main Etch=== | ||
| + | Measured using pieces mounted to a 6" Si carrier. | ||
* HfO<sub>2</sub> (250°C deposition): 29 nm/min | * HfO<sub>2</sub> (250°C deposition): 29 nm/min | ||
| − | * HfO<sub>2</sub> (250°C deposition, annealed): 21 nm/min | + | * HfO<sub>2</sub> (250°C deposition, annealed at 400°C for 1 min): 21 nm/min |
* GaN: 2.2 nm/min (13:1) | * GaN: 2.2 nm/min (13:1) | ||
| − | * SPR 955: | + | * SPR 955: 12.3 nm/min |
| − | * ZEP: | + | * ZEP: 11.9 nm/min |
| − | * PMMA: | + | * PMMA: 24.7 nm/min |
| − | * SiO<sub>2</sub>: | + | |
| + | Measured as a blanket film on a 6" wafer: | ||
| + | * SiO<sub>2</sub>: 13.8 nm/min | ||
==Parameters== | ==Parameters== | ||
| Line 53: | Line 57: | ||
==References== | ==References== | ||
| − | # Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and | + | # Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188. |
Latest revision as of 11:04, 8 November 2021
This recipe is designed to etch HfO2. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl4 which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | HfO2 |
| Mask Materials | Photoresist |
| Gases Used | BCl3 |
| Date Created | October 2021 |
| Authored By | Shawn Wright, Subhajit Mohanty |
This process requires more than the standard chamber clean.
Contents
Procedure
- Run etch
- Run Wafer_Clean_SiCl4 for 5 min on a blank Si wafer
Characterization
Main Etch
Measured using pieces mounted to a 6" Si carrier.
- HfO2 (250°C deposition): 29 nm/min
- HfO2 (250°C deposition, annealed at 400°C for 1 min): 21 nm/min
- GaN: 2.2 nm/min (13:1)
- SPR 955: 12.3 nm/min
- ZEP: 11.9 nm/min
- PMMA: 24.7 nm/min
Measured as a blanket film on a 6" wafer:
- SiO2: 13.8 nm/min
Parameters
| Parameter | Main Etch |
|---|---|
| Pressure | 5 mTorr |
| TCP Power | 400 W |
| Bias Power | 20 W |
| Vpk-pk | ~34 V |
| BCl3 Flow | 30 sccm |
| Time | < 5 min |
References
- Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.