Difference between revisions of "LAM 9400/Processes/LNF HfO2"

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This recipe is designed to etch HfO<sub>2</sub>. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl<sub>4</sub> which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.  
 
This recipe is designed to etch HfO<sub>2</sub>. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl<sub>4</sub> which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.  
  
 +
==Procedure==
 +
# Run etch
 +
# Run Wafer_Clean_SiCl4 for 5 min on a blank Si wafer
  
==Etch Rates==
+
==Characterization==
These were measured using pieces mounted to a 6" Si carrier.
 
 
 
 
===Main Etch===
 
===Main Etch===
 +
Measured using pieces mounted to a 6" Si carrier.
 
* HfO<sub>2</sub> (250°C deposition): 29 nm/min
 
* HfO<sub>2</sub> (250°C deposition): 29 nm/min
 
* HfO<sub>2</sub> (250°C deposition, annealed at 400°C for 1 min): 21 nm/min
 
* HfO<sub>2</sub> (250°C deposition, annealed at 400°C for 1 min): 21 nm/min
 
* GaN: 2.2 nm/min (13:1)
 
* GaN: 2.2 nm/min (13:1)
* SPR 955:  
+
* SPR 955: 12.3 nm/min
* ZEP:
+
* ZEP: 11.9 nm/min
* PMMA:  
+
* PMMA: 24.7 nm/min
* SiO<sub>2</sub>:
+
 
 +
Measured as a blanket film on a 6" wafer:
 +
* SiO<sub>2</sub>: 13.8 nm/min
  
 
==Parameters==
 
==Parameters==
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==References==
 
==References==
# Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and Hf O 2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.
+
# Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.

Latest revision as of 10:04, 8 November 2021


About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material HfO2
Mask Materials Photoresist
Gases Used BCl3
Date Created October 2021
Authored By Shawn Wright, Subhajit Mohanty
This process requires more than the standard chamber clean.

This recipe is designed to etch HfO2. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl4 which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.

Procedure

  1. Run etch
  2. Run Wafer_Clean_SiCl4 for 5 min on a blank Si wafer

Characterization

Main Etch

Measured using pieces mounted to a 6" Si carrier.

  • HfO2 (250°C deposition): 29 nm/min
  • HfO2 (250°C deposition, annealed at 400°C for 1 min): 21 nm/min
  • GaN: 2.2 nm/min (13:1)
  • SPR 955: 12.3 nm/min
  • ZEP: 11.9 nm/min
  • PMMA: 24.7 nm/min

Measured as a blanket film on a 6" wafer:

  • SiO2: 13.8 nm/min

Parameters

Parameter Main Etch
Pressure 5 mTorr
TCP Power 400 W
Bias Power 20 W
Vpk-pk ~34 V
BCl3 Flow 30 sccm
Time < 5 min

References

  1. Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.