Difference between revisions of "LAM 9400/Processes/LNF HfO2"
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* HfO<sub>2</sub> (250°C deposition, annealed at 400°C for 1 min): 21 nm/min | * HfO<sub>2</sub> (250°C deposition, annealed at 400°C for 1 min): 21 nm/min | ||
* GaN: 2.2 nm/min (13:1) | * GaN: 2.2 nm/min (13:1) | ||
| − | * SPR 955: | + | * SPR 955: 12.3 nm/min |
| − | * ZEP: | + | * ZEP: 11.9 nm/min |
| − | * PMMA: | + | * PMMA: 24.7 nm/min |
* SiO<sub>2</sub>: | * SiO<sub>2</sub>: | ||
Revision as of 08:39, 5 November 2021
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | HfO2 |
| Mask Materials | Photoresist |
| Gases Used | BCl3 |
| Date Created | October 2021 |
| Authored By | Shawn Wright, Subhajit Mohanty |
This process requires more than the standard chamber clean.
This recipe is designed to etch HfO2. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl4 which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.
Etch Rates
These were measured using pieces mounted to a 6" Si carrier.
Main Etch
- HfO2 (250°C deposition): 29 nm/min
- HfO2 (250°C deposition, annealed at 400°C for 1 min): 21 nm/min
- GaN: 2.2 nm/min (13:1)
- SPR 955: 12.3 nm/min
- ZEP: 11.9 nm/min
- PMMA: 24.7 nm/min
- SiO2:
Parameters
| Parameter | Main Etch |
|---|---|
| Pressure | 5 mTorr |
| TCP Power | 400 W |
| Bias Power | 20 W |
| Vpk-pk | ~34 V |
| BCl3 Flow | 30 sccm |
| Time | < 5 min |
References
- Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and Hf O 2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.
