LAM 9400/Processes/LNF HfO2
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Revision as of 16:44, 2 November 2021 by Wrightsh (talk | contribs) (→Etch Rates)
|About this Process|
|Date Created||October 2021|
|Authored By||Shawn Wright, Subhajit Mohanty|
This process requires more than the standard chamber clean.
This recipe is designed to etch HfO2. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl4 which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.
These were measured using pieces mounted to a 6" Si carrier.
- HfO2 (250°C deposition): 29 nm/min
- HfO2 (250°C deposition, annealed): 21 nm/min
- GaN: 2.2 nm/min (13:1)
- SPR 955:
|TCP Power||400 W|
|Bias Power||20 W|
|BCl3 Flow||30 sccm|
|Time||< 5 min|
- Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and Hf O 2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.