This recipe is designed to etch HfO2. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl4 which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | HfO2 |
| Mask Materials | Photoresist |
| Gases Used | BCl3 |
| Date Created | October 2021 |
| Authored By | Shawn Wright, Subhajit Mohanty |
This process requires more than the standard chamber clean.
Contents
Etch Rates
These were measured using 1cm pieces on a 6" Si carrier.
Main Etch
- HfO2 (250°C deposition): 29 nm/min
- HfO2 (250°C deposition, annealed): 21 nm/min
- GaN: 2.2 nm/min (13:1)
- SPR 955:
- ZEP:
- PMMA:
- SiO2:
Parameters
| Parameter | Main Etch |
|---|---|
| Pressure | 10 mTorr |
| TCP Power | 400 W |
| Bias Power | 20 W |
| Vpk-pk | ~34 V |
| BCl3 Flow | 30 sccm |
| Time | < 5 min |
References
- Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and Hf O 2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.