LAM 9400/Processes/LNF HfO2
|About this Process|
|Date Created||October 2021|
|Authored By||Shawn Wright, Subhajit Mohanty|
This recipe is designed to etch HfO2. Since Hf byproducts may not be effectively removed by the standard waferless autoclean we require a post etch process to be run to generate SiCl4 which is effective at cleaning Hf. The recipe "Wafer_Clean_SiCl4" needs to be run on a blank Si wafer for 5 min after etching HfO2 in this process.
These were measured using pieces mounted to a 6" Si carrier.
- HfO2 (250°C deposition): 29 nm/min
- HfO2 (250°C deposition, annealed at 400°C for 1 min): 21 nm/min
- GaN: 2.2 nm/min (13:1)
- SPR 955: 12.3 nm/min
- ZEP: 11.9 nm/min
- PMMA: 24.7 nm/min
|TCP Power||400 W|
|Bias Power||20 W|
|BCl3 Flow||30 sccm|
|Time||< 5 min|
- Ramos, R., G. Cunge, and O. Joubert. "Plasma reactor dry cleaning strategy after TiN, TaN and Hf O 2 etching processes." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26.1 (2008): 181-188.