Difference between revisions of "LAM 9400/Processes/LNF Poly"
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| Line 18: | Line 18: | ||
! Parameter | ! Parameter | ||
! Breakthrough | ! Breakthrough | ||
| − | ! Etch | + | ! Main Etch |
|- | |- | ||
| Pressure | | Pressure | ||
| − | | | + | | 5 mTorr |
| − | | | + | | 30 mTorr |
|- | |- | ||
| TCP Power | | TCP Power | ||
| 300 W | | 300 W | ||
| − | | | + | | 600 W |
|- | |- | ||
| Bias Power | | Bias Power | ||
| − | | | + | | 100 W |
| − | | | + | | 90 W |
|- | |- | ||
| Cl<sub>2</sub> Flow | | Cl<sub>2</sub> Flow | ||
| − | | | + | | 60 sccm |
| 0 sccm | | 0 sccm | ||
|- | |- | ||
| − | | | + | | HBr Flow |
| 0 sccm | | 0 sccm | ||
| 100 sccm | | 100 sccm | ||
|- | |- | ||
| He Flow | | He Flow | ||
| − | |||
| − | |||
| − | |||
| − | |||
| 0 sccm | | 0 sccm | ||
| 100 sccm | | 100 sccm | ||
Revision as of 17:04, 3 February 2016
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Poly |
| Mask Materials | PR |
| Gases Used | HBr, He |
| Date Created | 2016 |
LNF_Poly is designed for etching si and polysilicon in the LAM 9400. This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.
Contents
Parameters
| Parameter | Breakthrough | Main Etch |
|---|---|---|
| Pressure | 5 mTorr | 30 mTorr |
| TCP Power | 300 W | 600 W |
| Bias Power | 100 W | 90 W |
| Cl2 Flow | 60 sccm | 0 sccm |
| HBr Flow | 0 sccm | 100 sccm |
| He Flow | 0 sccm | 100 sccm |
Capabilities
Etch Rate
Mask Selectivity
Sidewall Profile
