Difference between revisions of "LAM 9400/Processes/LNF Poly"

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Line 18: Line 18:
 
! Parameter
 
! Parameter
 
! Breakthrough
 
! Breakthrough
! Etch
+
! Main Etch
 
|-
 
|-
 
| Pressure
 
| Pressure
| 100 mTorr
+
| 5 mTorr
| 12 mTorr
+
| 30 mTorr
 
|-
 
|-
 
| TCP Power
 
| TCP Power
 
| 300 W
 
| 300 W
| 500 W
+
| 600 W
 
|-
 
|-
 
| Bias Power
 
| Bias Power
| 50 W
+
| 100 W
| 30 W  
+
| 90 W  
 
|-
 
|-
 
| Cl<sub>2</sub> Flow
 
| Cl<sub>2</sub> Flow
| 100 sccm
+
| 60 sccm
 
| 0 sccm
 
| 0 sccm
 
|-
 
|-
| C<sub>4</sub>F<sub>8</sub> Flow
+
| HBr Flow
 
| 0 sccm
 
| 0 sccm
 
| 100 sccm
 
| 100 sccm
 
|-
 
|-
 
| He Flow
 
| He Flow
| 0 sccm
 
| 100 sccm
 
|-
 
| HBr
 
 
| 0 sccm
 
| 0 sccm
 
| 100 sccm
 
| 100 sccm

Revision as of 16:04, 3 February 2016


About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Poly
Mask Materials PR
Gases Used HBr, He
Date Created 2016

LNF_Poly is designed for etching si and polysilicon in the LAM 9400. This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.


Parameters

Parameter Breakthrough Main Etch
Pressure 5 mTorr 30 mTorr
TCP Power 300 W 600 W
Bias Power 100 W 90 W
Cl2 Flow 60 sccm 0 sccm
HBr Flow 0 sccm 100 sccm
He Flow 0 sccm 100 sccm

Capabilities

Etch Rate

Mask Selectivity

Sidewall Profile

LAM 9400 LNF Poly 2um grating.jpg

Limitations