Difference between revisions of "LAM 9400/Processes/LNF Poly"

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! Main Etch
 
! Main Etch
 
|-
 
|-
| Pressure
+
| Time
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| 10 sec
 +
| variable
 +
|-
 +
Pressure
 
| 5 mTorr
 
| 5 mTorr
 
| 30 mTorr
 
| 30 mTorr

Revision as of 17:10, 3 February 2016


About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Poly
Mask Materials PR
Gases Used HBr, He
Date Created 2016

LNF_Poly is designed for etching si and polysilicon in the LAM 9400. This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.


Parameters

Pressure
Parameter Breakthrough Main Etch
Time 10 sec variable
5 mTorr 30 mTorr
TCP Power 300 W 600 W
Bias Power 100 W 90 W
Cl2 Flow 60 sccm 0 sccm
HBr Flow 0 sccm 100 sccm
He Flow 0 sccm 100 sccm

Capabilities

Etch Rate

Mask Selectivity

Sidewall Profile

LAM 9400 LNF Poly 2um grating.jpg

Limitations