Difference between revisions of "LAM 9400/Processes/LNF Poly"
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==Sidewall Profile== | ==Sidewall Profile== | ||
| − | [[File:LAM_9400_LNF_Poly_2um_grating.jpg|400px]] | + | [[File:LAM_9400_LNF_Poly_2um_grating.jpg|400px|2µm grating in Si for 600 sec]] |
| + | [[File:LAM_9400_LNF_Poly_10um_grating.jpg|400px| 10µm grating in Si for 600 sec]] | ||
==Limitations== | ==Limitations== | ||
Revision as of 10:50, 8 February 2016
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Poly |
| Mask Materials | PR |
| Gases Used | HBr, He |
| Date Created | 2016 |
LNF_Poly is designed for etching si and polysilicon in the LAM 9400. This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.
Etch Rates
- Si - 2800 Å/min
- SPR 220 (3.0) - 275 Å/min
- SiO2 - 150 Å/min
Parameters
| Parameter | Breakthrough | Main Etch |
|---|---|---|
| Time | 10 sec | variable |
| Pressure | 5 mTorr | 30 mTorr |
| TCP Power | 300 W | 600 W |
| Bias Power | 100 W | 90 W |
| Cl2 Flow | 60 sccm | 0 sccm |
| HBr Flow | 0 sccm | 100 sccm |
| He Flow | 0 sccm | 100 sccm |
Sidewall Profile
