Difference between revisions of "LAM 9400/Processes/LNF Poly"
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==Limitations== | ==Limitations== | ||
| − | + | To remove the photoresist a ~20 sec dip in 100:1 HF is necessary before nanostrip. | |
Revision as of 15:45, 2 October 2019
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Poly |
| Mask Materials | PR |
| Gases Used | HBr, He |
| Date Created | 2016 |
LNF_Poly is designed for etching Si and Polysilicon in the LAM 9400. This recipe produces a very vertical sidewall angle and has a high selectively to oxide (~18:1).
Etch Rates
- Polysilicon - 2340 Å/min (blanket 150mm poly)
- Si - 2800 Å/min (<10% open area)
- SPR 220 (3.0) - 275 Å/min
- SiO2 - 150 Å/min
Parameters
| Parameter | Breakthrough | Main Etch |
|---|---|---|
| Time | 10 sec | variable |
| Pressure | 5 mTorr | 30 mTorr |
| TCP Power | 300 W | 600 W |
| Bias Power | 100 W | 90 W |
| Cl2 Flow | 60 sccm | 0 sccm |
| HBr Flow | 0 sccm | 100 sccm |
| He Flow | 0 sccm | 100 sccm |
Sidewall Profile
- Nearly a 90 degree sidewall angle
LNF_Poly for 600 sec, 2 µm grating
LNF_Poly for 600 sec, 10 µm grating
Limitations
To remove the photoresist a ~20 sec dip in 100:1 HF is necessary before nanostrip.
