Difference between revisions of "LAM 9400/Processes/LNF Poly"
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[[Category:Processes]] [[Category:RIE]] | [[Category:Processes]] [[Category:RIE]] | ||
| − | LNF_Poly is designed for etching | + | LNF_Poly is designed for etching [[Silicon|Si]] and [[Polysilicon]] in the LAM 9400. This recipe produces a very vertical sidewall angle and has a high selectively to oxide (~18:1). |
| + | ==Etch Rates== | ||
| + | * Polysilicon - 2340 Å/min (blanket 150mm poly) | ||
| + | *Si - 2800 Å/min (<10% open area) | ||
| + | *SPR 220 (3.0) - 275 Å/min | ||
| + | *SiO<sub>2</sub> - 150 Å/min | ||
| + | |||
| + | {{#widget:Iframe | ||
| + | |url=https://docs.google.com/spreadsheets/d/1fMQ3FPo6sf2o-e0B2FYGRTN6iBklOu8UjS5TBbYDg70/pubchart?oid=1633184043&format=interactive | ||
| + | |width=600 | ||
| + | |height=400 | ||
| + | |border=0 | ||
| + | }} | ||
==Parameters== | ==Parameters== | ||
| Line 18: | Line 30: | ||
! Parameter | ! Parameter | ||
! Breakthrough | ! Breakthrough | ||
| − | ! Etch | + | ! Main Etch |
| + | |- | ||
| + | | Time | ||
| + | | 10 sec | ||
| + | | variable | ||
|- | |- | ||
| − | | Pressure | + | |Pressure |
| − | | | + | | 5 mTorr |
| − | | | + | | 30 mTorr |
|- | |- | ||
| TCP Power | | TCP Power | ||
| 300 W | | 300 W | ||
| − | | | + | | 600 W |
|- | |- | ||
| Bias Power | | Bias Power | ||
| − | | | + | | 100 W |
| − | | | + | | 90 W |
|- | |- | ||
| Cl<sub>2</sub> Flow | | Cl<sub>2</sub> Flow | ||
| − | | | + | | 60 sccm |
| 0 sccm | | 0 sccm | ||
|- | |- | ||
| − | | | + | | HBr Flow |
| 0 sccm | | 0 sccm | ||
| 100 sccm | | 100 sccm | ||
|- | |- | ||
| He Flow | | He Flow | ||
| − | |||
| − | |||
| − | |||
| − | |||
| 0 sccm | | 0 sccm | ||
| 100 sccm | | 100 sccm | ||
|} | |} | ||
| − | == | + | ==Sidewall Profile== |
| − | + | * Nearly a 90 degree sidewall angle | |
| − | |||
| − | |||
| − | == | + | <gallery mode="packed-hover" heights="300px"> |
| + | File:LAM_9400_LNF_Poly_2um_grating.jpg|LNF_Poly for 600 sec, 2 µm grating | ||
| + | File:LAM_9400_LNF_Poly_10um_grating.jpg|LNF_Poly for 600 sec, 10 µm grating | ||
| + | </gallery> | ||
==Limitations== | ==Limitations== | ||
| + | To remove the photoresist a ~20 sec dip in 100:1 HF is necessary before nanostrip. | ||
Latest revision as of 12:41, 20 October 2021
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Poly |
| Mask Materials | PR |
| Gases Used | HBr, He |
| Date Created | 2016 |
LNF_Poly is designed for etching Si and Polysilicon in the LAM 9400. This recipe produces a very vertical sidewall angle and has a high selectively to oxide (~18:1).
Etch Rates
- Polysilicon - 2340 Å/min (blanket 150mm poly)
- Si - 2800 Å/min (<10% open area)
- SPR 220 (3.0) - 275 Å/min
- SiO2 - 150 Å/min
Parameters
| Parameter | Breakthrough | Main Etch |
|---|---|---|
| Time | 10 sec | variable |
| Pressure | 5 mTorr | 30 mTorr |
| TCP Power | 300 W | 600 W |
| Bias Power | 100 W | 90 W |
| Cl2 Flow | 60 sccm | 0 sccm |
| HBr Flow | 0 sccm | 100 sccm |
| He Flow | 0 sccm | 100 sccm |
Sidewall Profile
- Nearly a 90 degree sidewall angle
LNF_Poly for 600 sec, 2 µm grating
LNF_Poly for 600 sec, 10 µm grating
Limitations
To remove the photoresist a ~20 sec dip in 100:1 HF is necessary before nanostrip.
