Difference between revisions of "LAM 9400/Processes/LNF Poly"

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[[Category:Processes]] [[Category:RIE]]
 
[[Category:Processes]] [[Category:RIE]]
  
LNF_Poly is designed for etching si and polysilicon in the LAM 9400.  This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.
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LNF_Poly is designed for etching [[Silicon|Si]] and [[Polysilicon]] in the LAM 9400.  This recipe produces a very vertical sidewall angle and has a high selectively to oxide (~18:1).
  
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==Etch Rates==
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* Polysilicon - 2340 Å/min (blanket 150mm poly)
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*Si - 2800 Å/min (<10% open area)
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*SPR 220 (3.0) - 275 Å/min
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*SiO<sub>2</sub> - 150 Å/min
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{{#widget:Iframe
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|url=https://docs.google.com/spreadsheets/d/1fMQ3FPo6sf2o-e0B2FYGRTN6iBklOu8UjS5TBbYDg70/pubchart?oid=1633184043&format=interactive
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|width=600
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|height=400
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|border=0
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}}
  
 
==Parameters==
 
==Parameters==
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! Parameter
 
! Parameter
 
! Breakthrough
 
! Breakthrough
! Etch
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! Main Etch
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|-
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| Time
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| 10 sec
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| variable
 
|-
 
|-
| Pressure
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|Pressure
| 100 mTorr
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| 5 mTorr
| 12 mTorr
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| 30 mTorr
 
|-
 
|-
 
| TCP Power
 
| TCP Power
 
| 300 W
 
| 300 W
| 500 W
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| 600 W
 
|-
 
|-
 
| Bias Power
 
| Bias Power
| 50 W
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| 100 W
| 30 W  
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| 90 W  
 
|-
 
|-
 
| Cl<sub>2</sub> Flow
 
| Cl<sub>2</sub> Flow
| 100 sccm
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| 60 sccm
 
| 0 sccm
 
| 0 sccm
 
|-
 
|-
| C<sub>4</sub>F<sub>8</sub> Flow
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| HBr Flow
 
| 0 sccm
 
| 0 sccm
 
| 100 sccm
 
| 100 sccm
 
|-
 
|-
 
| He Flow
 
| He Flow
| 0 sccm
 
| 100 sccm
 
|-
 
| HBr
 
 
| 0 sccm
 
| 0 sccm
 
| 100 sccm
 
| 100 sccm
 
|}
 
|}
  
==Capabilities==
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==Sidewall Profile==
===Etch Rate===
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* Nearly a 90 degree sidewall angle
 
 
===Mask Selectivity===
 
  
===Sidewall Profile===
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<gallery mode="packed-hover"  heights="300px">
[[File:LAM_9400_LNF_Poly_2um_grating.jpg|400px]]
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File:LAM_9400_LNF_Poly_2um_grating.jpg|LNF_Poly for 600 sec, 2 µm grating
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File:LAM_9400_LNF_Poly_10um_grating.jpg|LNF_Poly for 600 sec, 10 µm grating
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</gallery>
  
 
==Limitations==
 
==Limitations==
 +
To remove the photoresist a ~20 sec dip in 100:1 HF is necessary before nanostrip.

Latest revision as of 11:41, 20 October 2021


About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Poly
Mask Materials PR
Gases Used HBr, He
Date Created 2016

LNF_Poly is designed for etching Si and Polysilicon in the LAM 9400. This recipe produces a very vertical sidewall angle and has a high selectively to oxide (~18:1).

Etch Rates

  • Polysilicon - 2340 Å/min (blanket 150mm poly)
  • Si - 2800 Å/min (<10% open area)
  • SPR 220 (3.0) - 275 Å/min
  • SiO2 - 150 Å/min

Parameters

Parameter Breakthrough Main Etch
Time 10 sec variable
Pressure 5 mTorr 30 mTorr
TCP Power 300 W 600 W
Bias Power 100 W 90 W
Cl2 Flow 60 sccm 0 sccm
HBr Flow 0 sccm 100 sccm
He Flow 0 sccm 100 sccm

Sidewall Profile

  • Nearly a 90 degree sidewall angle

Limitations

To remove the photoresist a ~20 sec dip in 100:1 HF is necessary before nanostrip.