Difference between revisions of "LAM 9400/Processes/LNF Poly"

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===Sidewall Profile===
===Sidewall Profile===

Revision as of 15:20, 2 February 2016

About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Poly
Mask Materials PR
Gases Used HBr, He
Date Created 2016

LNF_Poly is designed for etching si and polysilicon in the LAM 9400. This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.


Parameter Breakthrough Etch
Pressure 100 mTorr 12 mTorr
TCP Power 300 W 500 W
Bias Power 50 W 30 W
Cl2 Flow 100 sccm 0 sccm
C4F8 Flow 0 sccm 100 sccm
He Flow 0 sccm 100 sccm
HBr 0 sccm 100 sccm


Etch Rate

Mask Selectivity

Sidewall Profile

LAM 9400 LNF Poly 2um grating.jpg