Difference between revisions of "LAM 9400/Processes/LNF Poly"
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==Limitations== | ==Limitations== | ||
Revision as of 15:20, 2 February 2016
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Poly |
| Mask Materials | PR |
| Gases Used | HBr, He |
| Date Created | 2016 |
LNF_Poly is designed for etching si and polysilicon in the LAM 9400. This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.
Contents
Parameters
| Parameter | Breakthrough | Etch |
|---|---|---|
| Pressure | 100 mTorr | 12 mTorr |
| TCP Power | 300 W | 500 W |
| Bias Power | 50 W | 30 W |
| Cl2 Flow | 100 sccm | 0 sccm |
| C4F8 Flow | 0 sccm | 100 sccm |
| He Flow | 0 sccm | 100 sccm |
| HBr | 0 sccm | 100 sccm |
Capabilities
Etch Rate
Mask Selectivity
Sidewall Profile
