Difference between revisions of "LAM 9400/Processes/LNF Poly"
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| Line 20: | Line 20: | ||
! Main Etch | ! Main Etch | ||
|- | |- | ||
| − | | Pressure | + | | Time |
| + | | 10 sec | ||
| + | | variable | ||
| + | |- | ||
| + | Pressure | ||
| 5 mTorr | | 5 mTorr | ||
| 30 mTorr | | 30 mTorr | ||
Revision as of 16:10, 3 February 2016
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | Poly |
| Mask Materials | PR |
| Gases Used | HBr, He |
| Date Created | 2016 |
LNF_Poly is designed for etching si and polysilicon in the LAM 9400. This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.
Contents
Parameters
Pressure| Parameter | Breakthrough | Main Etch |
|---|---|---|
| Time | 10 sec | variable |
| 5 mTorr | 30 mTorr | |
| TCP Power | 300 W | 600 W |
| Bias Power | 100 W | 90 W |
| Cl2 Flow | 60 sccm | 0 sccm |
| HBr Flow | 0 sccm | 100 sccm |
| He Flow | 0 sccm | 100 sccm |
Capabilities
Etch Rate
Mask Selectivity
Sidewall Profile
