Difference between revisions of "LAM 9400/Processes/LNF Poly"

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LNF_Poly is designed for etching si and polysilicon in the LAM 9400.  This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.
 
LNF_Poly is designed for etching si and polysilicon in the LAM 9400.  This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.
  
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==Etch Rates==
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*Si - 2800 Å/min
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*SPR 220 (3.0) - 275 Å/min
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*SiO<sub>2</sub> - 150 Å/min
  
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==Parameters==
 
==Parameters==
 
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==Capabilities==
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==Sidewall Profile==
===Etch Rate===
 
 
 
===Mask Selectivity===
 
 
 
===Sidewall Profile===
 
 
[[File:LAM_9400_LNF_Poly_2um_grating.jpg|400px]]
 
[[File:LAM_9400_LNF_Poly_2um_grating.jpg|400px]]
  
 
==Limitations==
 
==Limitations==

Revision as of 10:43, 8 February 2016


About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Poly
Mask Materials PR
Gases Used HBr, He
Date Created 2016

LNF_Poly is designed for etching si and polysilicon in the LAM 9400. This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.

Etch Rates

  • Si - 2800 Å/min
  • SPR 220 (3.0) - 275 Å/min
  • SiO2 - 150 Å/min

{{#widget:Iframe |url=https://docs.google.com/spreadsheets/d/1fMQ3FPo6sf2o-e0B2FYGRTN6iBklOu8UjS5TBbYDg70/pubchart?oid=1633184043&format=interactive |width=600 |height=400 |border=0 }

Parameters

Parameter Breakthrough Main Etch
Time 10 sec variable
Pressure 5 mTorr 30 mTorr
TCP Power 300 W 600 W
Bias Power 100 W 90 W
Cl2 Flow 60 sccm 0 sccm
HBr Flow 0 sccm 100 sccm
He Flow 0 sccm 100 sccm

Sidewall Profile

LAM 9400 LNF Poly 2um grating.jpg

Limitations