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LAM 9400/Processes/LNF Poly

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LNF_Poly is designed for etching si and polysilicon in the LAM 9400. This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.

About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Poly
Mask Materials PR
Gases Used HBr, He
Date Created 2016


Contents

Parameters

Parameter Breakthrough Etch
Pressure 100 mTorr 12 mTorr
TCP Power 300 W 500 W
Bias Power 50 W 30 W
Cl2 Flow 100 sccm 0 sccm
C4F8 Flow 0 sccm 100 sccm
He Flow 0 sccm 100 sccm
HBr 0 sccm 100 sccm

Capabilities

Etch Rate

Mask Selectivity

Sidewall Profile

Limitations