LAM 9400/Processes/LNF Poly

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About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Poly
Mask Materials PR
Gases Used HBr, He
Date Created 2016

LNF_Poly is designed for etching si and polysilicon in the LAM 9400. This recipe is currently under development and will replace poly_etch_2 as it does not have the same stability problems.


Parameters

Parameter Breakthrough Etch
Pressure 100 mTorr 12 mTorr
TCP Power 300 W 500 W
Bias Power 50 W 30 W
Cl2 Flow 100 sccm 0 sccm
C4F8 Flow 0 sccm 100 sccm
He Flow 0 sccm 100 sccm
HBr 0 sccm 100 sccm

Capabilities

Etch Rate

Mask Selectivity

Sidewall Profile

Limitations

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