Difference between revisions of "LAM 9400/Processes/LNF TiN sel Al2O3"
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==Etch Profile== | ==Etch Profile== | ||
| + | This etch doesn't appear to undercut even with significant overetch. Below is a 20 sec etch (aprox. 15sec overetch). | ||
{| class="wikitable" | {| class="wikitable" | ||
| [[File:LAM_9400_TiN_sel_Al2O3.jpg|frameless|left]] | | [[File:LAM_9400_TiN_sel_Al2O3.jpg|frameless|left]] | ||
Revision as of 11:07, 2 July 2019
| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | TiN, Ti |
| Mask Materials | Photoresist, SiO2, Al2O3 |
| Gases Used | Ar, Cl2, SF6 |
| Date Created | June 2019 |
| Authored By | Shawn Wright |
This recipe is designed to etch TiN while being very selective to Al2O3. We currently don't have a clear etch rate for the TiN, however it's >100nm/min.
Etch Profile
This etch doesn't appear to undercut even with significant overetch. Below is a 20 sec etch (aprox. 15sec overetch).
 |
Etch Rates
These were measured using 1cm pieces on a 6" Si carrier.
Main Etch
- TiN: >150 nm/min
- Veeco Al2O3: 3.2 nm/min
- SiO2: 46.9 nm/min
Parameters
| Parameter | Main Etch |
|---|---|
| Pressure | 10 mTorr |
| TCP Power | 400 W |
| Bias Power | 20 W |
| Vpk-pk | ~30 V |
| Ar Flow | 84 sccm |
| Cl2 Flow | 36 sccm |
| SF6 Flow | 10 sccm |
| Time | 10-60 sec (typ) |
