Difference between revisions of "LAM 9400/Processes/LNF TiN sel Al2O3"

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==Etch Profile==
 
==Etch Profile==
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This etch doesn't appear to undercut even with significant overetch.  Below is a 20 sec etch (aprox. 15sec overetch).
 
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| [[File:LAM_9400_TiN_sel_Al2O3.jpg|frameless|left]]
 
| [[File:LAM_9400_TiN_sel_Al2O3.jpg|frameless|left]]

Revision as of 10:07, 2 July 2019


About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material TiN, Ti
Mask Materials Photoresist, SiO2, Al2O3
Gases Used Ar, Cl2, SF6
Date Created June 2019
Authored By Shawn Wright

This recipe is designed to etch TiN while being very selective to Al2O3. We currently don't have a clear etch rate for the TiN, however it's >100nm/min.

Etch Profile

This etch doesn't appear to undercut even with significant overetch. Below is a 20 sec etch (aprox. 15sec overetch).

LAM 9400 TiN sel Al2O3.jpg

Etch Rates

These were measured using 1cm pieces on a 6" Si carrier.

Main Etch

  • TiN: >150 nm/min
  • Veeco Al2O3: 3.2 nm/min
  • SiO2: 46.9 nm/min


Parameters

Parameter Main Etch
Pressure 10 mTorr
TCP Power 400 W
Bias Power 20 W
Vpk-pk ~30 V
Ar Flow 84 sccm
Cl2 Flow 36 sccm
SF6 Flow 10 sccm
Time 10-60 sec (typ)