Difference between revisions of "LAM 9400/Processes/LNF Ti thin"

From LNF Wiki
Jump to navigation Jump to search
 
Line 17: Line 17:
 
* Titanium - 6.9 nm/min
 
* Titanium - 6.9 nm/min
 
* PMMA - 9-11 nm/min
 
* PMMA - 9-11 nm/min
* ZEP - ~4.3-8 nm/min
+
* ZEP - ~ 4.3-8 nm/min
 
*SPR 220 - 9 nm/min
 
*SPR 220 - 9 nm/min
 
*SiO<sub>2</sub> - 4.7 nm/min
 
*SiO<sub>2</sub> - 4.7 nm/min

Latest revision as of 14:56, 25 June 2018


About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Titanium
Mask Materials PR
Gases Used SF6, C4F8, Ar
Date Created June 2018

LNF_Ti_thin is for etching very thin layers of Ti (10-20nm) with a PMMA mask.

Etch Rates

These were in a 90-180 sec long etch on 1cm pieces with a 6" SiO2 carrier.

  • Titanium - 6.9 nm/min
  • PMMA - 9-11 nm/min
  • ZEP - ~ 4.3-8 nm/min
  • SPR 220 - 9 nm/min
  • SiO2 - 4.7 nm/min

Parameters

Parameter Main Etch
Pressure 30 mTorr
TCP Power 200 W
Bias Power 30 W
SF6 Flow 5 sccm
C4F8 Flow 45 sccm
Ar Flow 45 sccm