LAM 9400/Processes/LNF Ti thin

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About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material Titanium
Mask Materials PR
Gases Used SF6, C4F8, Ar
Date Created June 2018

LNF_Ti_thin is for etching very thin layers of Ti (10-20nm) with a PMMA mask.

Etch Rates

These were in a 90-180 sec long etch on 1cm pieces with a 6" SiO2 carrier.

  • Titanium - 6.9 nm/min
  • PMMA - 9-11 nm/min
  • ZEP - ~4.3-8 nm/min
  • SPR 220 - 9 nm/min
  • SiO2 - 4.7 nm/min

Parameters

Parameter Main Etch
Pressure 30 mTorr
TCP Power 200 W
Bias Power 30 W
SF6 Flow 5 sccm
C4F8 Flow 45 sccm
Ar Flow 45 sccm