LAM 9400/Processes/mnf parylene fast iso
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| About this Process | |
|---|---|
| Process Details | |
| Equipment | LAM 9400 |
| Technology | RIE |
| Material | polymers |
| Gases Used | O2 |
| Date Created | 2008 |
This is an O2 plasma for etching polymers such as parylene.
Parameters
| Parameter | Etch |
|---|---|
| Pressure | 30 mTorr |
| TCP Power | 300 W |
| Bias Power | 50 W |
| O2 Flow | 80 sccm |
Capabilities
Etch Rate
- SPR 220 (100% area) : 392 nm/min (2.7% uniformity)
- Parylene (100% area) : 420 nm/min
