LAM 9400/Processes/mnf parylene fast iso

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About this Process
Process Details
Equipment LAM 9400
Technology RIE
Material polymers
Gases Used O2
Date Created 2008

This is an O2 plasma for etching polymers such as parylene.


Parameters

Parameter Etch
Pressure 30 mTorr
TCP Power 300 W
Bias Power 50 W
O2 Flow 80 sccm

Capabilities

Etch Rate

  • SPR 220 (100% area) : 392 nm/min (2.7% uniformity)
  • Parylene (100% area) : 420 nm/min
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