Difference between revisions of "Lab 18-2"

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[[Sputter_deposition|< Sputter deposition]]
 
[[Sputter_deposition|< Sputter deposition]]
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{{#vardefine:toolid|61081}}
 
<!-- Set the Process Technology (see subcategories on Equipment page) -->
 
{{#vardefine:technology|PVD}}
 
<!-- Set the Material Restriction Level: 1 = CMOS Clean, 2 = Semi-Clean, 3 = Metals -->
 
{{#vardefine:restriction|3}}
 
 
{{infobox equipment
 
{{infobox equipment
 
|restriction = [[{{PAGENAME}}#Material_Restrictions|Semi-Clean]]
 
|restriction = [[{{PAGENAME}}#Material_Restrictions|Semi-Clean]]
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}}
 
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Lab 18-2 is a magnetron [[sputter deposition]] tool for '''depositing''' '''common and precious metals.''' Sputter deposition is achieved by bombarding a source material with energetic ions, typically Ar+. Atoms at the surface of the target are knocked loose, and transported to the surface of the substrate, where deposition occurs. Electrically conductive material such as Al, W, and Ti can use a dc power source, in which the target acts as the cathode in a diode system. Sputtering of dielectrics such as silicon dioxide, or aluminum oxide requires an Rf power source to supply energy to the argon atoms. Sputter films are ideal for sidewall coverage in low thermal budget cases for contact and insulating layers over features.
Lab 18-2 is a magnetron [[sputter deposition]] tool for '''depositing''' '''common and precious metals.''' Sputter deposition is achieved by bombarding a source material with energetic ions, typically Ar+. Atoms at the surface of the target are knocked loose, and transported to the surface of the substrate, where deposition occurs. Electrically conductive material such as Al, W, and Ti can use a dc power source, in which the target acts as the cathode in a diode system. Sputtering of dielectrics such as silicon dioxide, or aluminum oxide requires an Rf power source to supply energy to the argon atoms. Sputter films are ideal for sidewall coverage in low thermal budget cases for contact and insulating layers over features.  
 
 
 
 
==Announcements==
 
==Announcements==
 
<!-- *Update this with announcements as necessary -->
 
<!-- *Update this with announcements as necessary -->
 +
 
*The target configuration has been moved to the Supported Process section below. Follow the link to Lab 18-2/Processes. On that page under the Target Calendar header is the link to the calendar.
 
*The target configuration has been moved to the Supported Process section below. Follow the link to Lab 18-2/Processes. On that page under the Target Calendar header is the link to the calendar.
  
 
==Capabilities==
 
==Capabilities==
* Computer controlled recipes  
+
 
* Load lock supported processing  
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*Computer controlled recipes
* limited film stress versatility with in film development.
+
*Load lock supported processing
* Reactive Film capabilities (Ar, O<sub>2</sub>, and N<sub>2</sub>)
+
*limited film stress versatility with in film development.
 +
*Reactive Film capabilities (Ar, O<sub>2</sub>, and N<sub>2</sub>)
  
 
==Supported Processes==  
 
==Supported Processes==  
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{| class="wikitable" border="1"
 
{| class="wikitable" border="1"
 
|-
 
|-
! Material
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!Material
! Max thickness (Run/Reservation)
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!Max thickness (Run/Reservation)
!  
+
!
 
|-
 
|-
| Aluminum ([[Aluminum|Al]])
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|Aluminum ([[Aluminum|Al]])
| 5000Å / 1 µm
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|5000Å / 1 µm
 
|-
 
|-
 
<!--| Alumina/Aluminum Oxide ([[Al2O3|Al<sub>2</sub>O<sub>3</sub>]])
 
<!--| Alumina/Aluminum Oxide ([[Al2O3|Al<sub>2</sub>O<sub>3</sub>]])
 
| 1000Å / NA
 
| 1000Å / NA
 
|-->
 
|-->
| Chrome ([[Chrome|Cr]])
+
|Chrome ([[Chrome|Cr]])
| 2000Å / NA
+
|2000Å / NA
 
|-
 
|-
 
<!--| Copper ([[Copper|Cu]])
 
<!--| Copper ([[Copper|Cu]])
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| 4000 Å / NA
 
| 4000 Å / NA
 
|--->
 
|--->
| Gold ([[Gold|Au]])
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|Gold ([[Gold|Au]])
| 3000Å / 5000Å
+
|3000Å / 5000Å
 
|-
 
|-
 
<!--| Iron ([[Iron|Ir]])
 
<!--| Iron ([[Iron|Ir]])
 
| 1000Å / 5000Å  
 
| 1000Å / 5000Å  
 
|--->
 
|--->
| Nickel ([[Nickel|Ni]])
+
|Nickel ([[Nickel|Ni]])
| 2000 Å / 5000Å  
+
|2000 Å / 5000Å
 
|-
 
|-
 
<!--| Molybdenum ([[Molybdenum|Mo]])
 
<!--| Molybdenum ([[Molybdenum|Mo]])
 
| 2000 Å / 8000 Å
 
| 2000 Å / 8000 Å
 
|--->
 
|--->
| Platinum ([[Platinum|Pt]])
+
|Platinum ([[Platinum|Pt]])
| 1000 Å / 5000Å
+
|1000 Å / 5000Å
 
|-
 
|-
 
<!--| Silver ([[Silver|Ag]])
 
<!--| Silver ([[Silver|Ag]])
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| 2000 Å / NA
 
| 2000 Å / NA
 
|--->
 
|--->
| Titanium ([[Titanium|Ti]])
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|Titanium ([[Titanium|Ti]])
| 3000 Å / 5000 Å
+
|3000 Å / 5000 Å
 
|-
 
|-
 
<!--| Titanium Dioxide ([[Titanium Dioxide|TiO<sub>2</sub>]])
 
<!--| Titanium Dioxide ([[Titanium Dioxide|TiO<sub>2</sub>]])
 
| 2000 Å / 5000 Å
 
| 2000 Å / 5000 Å
 
|--->
 
|--->
| Tungsten ([[Tungsten|W]])
+
|Tungsten ([[Tungsten|W]])
| 3000 Å / 9000 Å
+
|3000 Å / 9000 Å
 
|-
 
|-
| Tungsten/Titanium ([[Tungsten/Titanium|W-Ti]])
+
|Tungsten/Titanium ([[Tungsten/Titanium|W-Ti]])
| 3000 Å / 9000 Å
+
|3000 Å / 9000 Å
 
|-
 
|-
 
|}
 
|}
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===Hardware Details===
 
===Hardware Details===
 +
 
*Cryo pumped chamber – upper 10<sup>-7</sup> Torr base pressure
 
*Cryo pumped chamber – upper 10<sup>-7</sup> Torr base pressure
 
*Chamber capacity: single wafer
 
*Chamber capacity: single wafer
 
*Configured with a load lock
 
*Configured with a load lock
 
*Sample heating – up to 500°C
 
*Sample heating – up to 500°C
* Power specs
+
*Power specs
 
**Five 3” Sputtering Guns
 
**Five 3” Sputtering Guns
 
**2 DC and 2 RF power supply (one for sample bias)
 
**2 DC and 2 RF power supply (one for sample bias)
  
 
===Substrate Requirements===
 
===Substrate Requirements===
 +
 
*Sample sizes: pieces, up to 6” wafers.
 
*Sample sizes: pieces, up to 6” wafers.
 
*Wafer holders available for 2", 3", 4", 6"; as well as clip fixtures for smaller pieces
 
*Wafer holders available for 2", 3", 4", 6"; as well as clip fixtures for smaller pieces
** Diameter 150 mm maximum
+
**Diameter 150 mm maximum
** Substrates up to 4 mm Thick. With special fixture up to 8 mm.
+
**Substrates up to 4 mm Thick. With special fixture up to 8 mm.
** [https://docs.google.com/document/d/1p8k5awL8j_HvGESUDsE80uE2obIYRb_8AiQzlfoDT3Q/edit#|Sputter Sample Mounting]
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**[https://docs.google.com/document/d/1p8k5awL8j_HvGESUDsE80uE2obIYRb_8AiQzlfoDT3Q/edit#|Sputter Sample Mounting]
  
 
===Material Restrictions===
 
===Material Restrictions===
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<!-- This is an example of a chart published with etch data. You can just replace the url with your own. -->
 
<!-- This is an example of a chart published with etch data. You can just replace the url with your own. -->
 
For more details, see [[KJLC Sputter Tool Access and Training]].
 
For more details, see [[KJLC Sputter Tool Access and Training]].
# Read through the Standard Operating Procedure above.
+
 
 +
#Read through the Standard Operating Procedure above.
 
<!--# Complete the training request form [<link> here]. -->
 
<!--# Complete the training request form [<link> here]. -->
# Create a helpdesk ticket requesting training.  
+
#Create a helpdesk ticket requesting training.
# A tool engineer will schedule a time for initial training.
+
#A tool engineer will schedule a time for initial training.
# Practice with your mentor or another authorized user until you are comfortable with tool operation.
+
#Practice with your mentor or another authorized user until you are comfortable with tool operation.
 
<!--# Complete the SOP quiz [<link> here]. -->
 
<!--# Complete the SOP quiz [<link> here]. -->
# Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
+
#Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
  
 
<!--==Tool Qualification== -->
 
<!--==Tool Qualification== -->

Revision as of 11:27, 25 February 2020

< Sputter deposition

Lab 18-2
Equipment Details
Technology [[]]
Materials Restriction Undefined
Material Processed Al, Cr, Au, Ir, Ni, Pt, Ag, Ti, W, W-Ti
Sample Size 150mm x 4mm and smaller samples
Gases Used Ar, N2, O2
Equipment Manual
Supported Processes Supported Processes
User Processes User Processes


Lab 18-2 is a magnetron sputter deposition tool for depositing common and precious metals. Sputter deposition is achieved by bombarding a source material with energetic ions, typically Ar+. Atoms at the surface of the target are knocked loose, and transported to the surface of the substrate, where deposition occurs. Electrically conductive material such as Al, W, and Ti can use a dc power source, in which the target acts as the cathode in a diode system. Sputtering of dielectrics such as silicon dioxide, or aluminum oxide requires an Rf power source to supply energy to the argon atoms. Sputter films are ideal for sidewall coverage in low thermal budget cases for contact and insulating layers over features.

Announcements

  • The target configuration has been moved to the Supported Process section below. Follow the link to Lab 18-2/Processes. On that page under the Target Calendar header is the link to the calendar.

Capabilities

  • Computer controlled recipes
  • Load lock supported processing
  • limited film stress versatility with in film development.
  • Reactive Film capabilities (Ar, O2, and N2)

Supported Processes

Lab 18-2/Processes

Basic "User" access with the Lab 18's provide researchers with the ability to load, transfer samples, and deposit standard characterized materials. For more details such as standard recipe parameters and sidewall coverage (limited data), see Lab 18-2/Processes.

In addition to these, this tool has a number of user-supported recipes for depositing a wide variety of materials. Some of these recipes are documented on User Processes.

If you have a material deposition need that is not listed, check to see if this material is deposited on on another PVD tool or see more about options for running your own private material on the LNF PVD Films page.

Process Name

Multiple staff characterized films are available. If two thicknesses are listed the first is for per run and the second thickness is for total material used per reservation.

Material Max thickness (Run/Reservation)
Aluminum (Al) 5000Å / 1 µm
Chrome (Cr) 2000Å / NA
Gold (Au) 3000Å / 5000Å
Nickel (Ni) 2000 Å / 5000Å
Platinum (Pt) 1000 Å / 5000Å
Titanium (Ti) 3000 Å / 5000 Å
Tungsten (W) 3000 Å / 9000 Å
Tungsten/Titanium (W-Ti) 3000 Å / 9000 Å

System Overview

The Lab 18-2 has a 18" D-shaped chamber with a load lock chamber to quickly load and unload samples without breaking high vacuum in the process chamber. The tools five magnetron sputtering sources are set up to allow for RF, DC, and DC co-sputtering. There is an additional Rf power supply on the substrate platen to allow for in situ sample cleans, and bias voltage to manipulate the film characteristics. Sample heating up to 500C is achieved by using the tools quartz heater lamps.

Hardware Details

  • Cryo pumped chamber – upper 10-7 Torr base pressure
  • Chamber capacity: single wafer
  • Configured with a load lock
  • Sample heating – up to 500°C
  • Power specs
    • Five 3” Sputtering Guns
    • 2 DC and 2 RF power supply (one for sample bias)

Substrate Requirements

  • Sample sizes: pieces, up to 6” wafers.
  • Wafer holders available for 2", 3", 4", 6"; as well as clip fixtures for smaller pieces
    • Diameter 150 mm maximum
    • Substrates up to 4 mm Thick. With special fixture up to 8 mm.
    • Sample Mounting

Material Restrictions

The Lab 18-2 is the sole sputtering tool for precious metal materials. The Lab 18-2 is designated as a Undefined class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.


Standard Operating Procedure

Widget text will go here.

Checkout Procedure

The Lab 18-2 is on the LNF Scheduler. LNF constituents may reserve time on the tool, and even request staff support for process development. For more details, see KJLC Sputter Tool Access and Training.

  1. Read through the Standard Operating Procedure above.
  2. Create a helpdesk ticket requesting training.
  3. A tool engineer will schedule a time for initial training.
  4. Practice with your mentor or another authorized user until you are comfortable with tool operation.
  5. Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.


Maintenance

For more details, see Lab 18-2/Maintenance and qualification.