Difference between revisions of "Low pressure chemical vapor deposition"

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(Created page with "{{quote|text=Low-pressure CVD (LPCVD) – CVD at sub-atmospheric pressures. Reduced pressures tend to reduce unwanted gas-phase reactions and improve film uniformity across th...")
 
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{{quote|text=Low-pressure CVD (LPCVD) – CVD at sub-atmospheric pressures. Reduced pressures tend to reduce unwanted gas-phase reactions and improve film uniformity across the wafer.|source=[[wikipedia:Chemical_vapor_deposition|Wikipedia]]}}
 
{{quote|text=Low-pressure CVD (LPCVD) – CVD at sub-atmospheric pressures. Reduced pressures tend to reduce unwanted gas-phase reactions and improve film uniformity across the wafer.|source=[[wikipedia:Chemical_vapor_deposition|Wikipedia]]}}
 
== Process Description ==
 
== Process Description ==
Two gases react over the surface of the substrate, depositing oxide at a controlled constant rate at high temperature (lower temperature than [[:Category:CVD|Chemical Vapor Deposition (CVD)]] Diffusion furnace). The wafer is exposed to volatile precursers that react with or decompose the substrate surface to produce the deposited layer. Frequently, volatile products are produced in the reaction, and gas is flowed through the chamber to remove these products. Deposition rates of 3000-5000 Angstroms/minute. Oxide is not as high quality as diffusion furnace oxide.
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Two gases react over the surface of the substrate, depositing oxide at a controlled constant rate at high temperature (lower temperature than [[:Category:CVD|Chemical Vapor Deposition (CVD)]] Diffusion furnace). The wafer is exposed to volatile precursors that react with or decompose the substrate surface to produce the deposited layer. Frequently, volatile products are produced in the reaction, and gas is flowed through the chamber to remove these products. Deposition rates of 30-60 Angstroms/minute. Oxide is not as high quality as diffusion furnace oxide.
  
Sx Ty referes to tube y in [[Tempress]] [[furnace]] stack x. Stacks 1-5 are located in [[1480C]], [[Tempress S6|stack 6]] is located in [[1440B]].
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Sx Ty refers to tube y in [[Tempress]] [[furnace]] stack x. Stacks 1-5 are located in [[1480C]], [[Tempress S6|stack 6]] is located in [[1440B]].
  
 
[[Category:LPCVD|LPCVD]]
 
[[Category:LPCVD|LPCVD]]

Revision as of 14:18, 9 November 2015

Low-pressure CVD (LPCVD) – CVD at sub-atmospheric pressures. Reduced pressures tend to reduce unwanted gas-phase reactions and improve film uniformity across the wafer.

Process Description

Two gases react over the surface of the substrate, depositing oxide at a controlled constant rate at high temperature (lower temperature than Chemical Vapor Deposition (CVD) Diffusion furnace). The wafer is exposed to volatile precursors that react with or decompose the substrate surface to produce the deposited layer. Frequently, volatile products are produced in the reaction, and gas is flowed through the chamber to remove these products. Deposition rates of 30-60 Angstroms/minute. Oxide is not as high quality as diffusion furnace oxide.

Sx Ty refers to tube y in Tempress furnace stack x. Stacks 1-5 are located in 1480C, stack 6 is located in 1440B.