Difference between revisions of "MA6 Mask Aligner"
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==Checkout procedure== | ==Checkout procedure== | ||
− | + | ||
− | # Read through | + | # Complete a [[Lithography training session]]. If you have already completed this for another tool, you do not need to complete it again. |
− | + | # Read through the User Manual above. | |
− | |||
# Practice with your mentor or another authorized user until you are comfortable with tool operation. | # Practice with your mentor or another authorized user until you are comfortable with tool operation. | ||
− | # | + | # Accurately complete the [https://docs.google.com/a/lnf.umich.edu/forms/d/1L5TToo8m1ZaTqTK5p8UJ6gEcPR_8UFawA21pygwi_34/viewform SOP quiz]. You may retake as necessary until all answers are correct. |
+ | # Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} helpdesk ticket] requesting checkout. | ||
+ | # Authorization will be provided pending demonstration of proper tool use in the presence of a tool engineer. |
Revision as of 14:30, 5 August 2021
MA6 Mask Aligner | |
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Equipment Details | |
Technology | Contact Lithography |
Materials Restriction | Semi-Clean |
Material Processed | Photoresist |
Mask Materials | 4", 5", 7" mask plates |
Sample Size | 4" and 6" wafers |
Chemicals Used | LNF approved photoresists |
Equipment Manual | |
Overview | System Overview |
Operating Procedure | Topside Mask Alignment SOP |
The MA6 Mask Aligner is primarily used to expose photo-definable materials. We allow 4” masks, 5” masks, 7” masks, transparencies, shadow masking, or just flood exposure.
Contents
Capabilities
- 2 µm min feature size resolution in thin resist
- Aspect Ratio 1:3 fairly standard
- Substrate thickness 200 µm to 4 mm possible
System overview
Hardware Details
- Broadband light source calibrated to 20 mJ/sec at the 405 nm peak. Total broadband dose about 30 mJ/sec
- 4" and 6" chucks
- 4", 5" and 7" mask holders
- Flood exposure, soft, hard, and vacuum contact capable
- Topside alignment (no backside or bond alignment)
- 10 mm stage travel, 150 mm microscope objective travel with split field view camera option
Substrate requirements
- Full 4" and 6" wafers standard
- Pieces are not allowed in this mask aligner. For pieces use MJB3 instead
- Mounting may be necessary if wafer has thru holes, etc. Create helpdesk ticket for assistance
- Substrate thickness 200 µm to 4 mm possible
Material restrictions
Allowed Materials - LNF approved photoresists
Not Allowed Materials - Uncured PDMS and SU-8 (restricted w/out approval)
Supported processes
This tool is primarily used to expose photodefinable materials. The lamp output is calibrated to the 405 nm peak at 20 mJ/sec with <5% uniformity across the 4” area. The 365 peak output is about half of this and tracks very well however is not routinely calibrated. We allow 4” masks, 5” masks, 7” masks, transparencies, shadow masking, or a manually timed flood exposure.
Exposure of all LNF approved photoresists are allowed on this tool, for data on specific resist please see that resists wiki page.
Standard operating procedure
Checkout procedure
- Complete a Lithography training session. If you have already completed this for another tool, you do not need to complete it again.
- Read through the User Manual above.
- Practice with your mentor or another authorized user until you are comfortable with tool operation.
- Accurately complete the SOP quiz. You may retake as necessary until all answers are correct.
- Create a helpdesk ticket requesting checkout.
- Authorization will be provided pending demonstration of proper tool use in the presence of a tool engineer.