Difference between revisions of "P5000 PECVD"

From LNF Wiki
Jump to navigation Jump to search
(Created page with "<!-- Set the resource ID, 5 digit # found on the scheduler --> {{#vardefine:toolid|21051}} <!-- Set the Process Technology (see subcategories on Equipment page) --> {{#vardefi...")
 
 
(56 intermediate revisions by 3 users not shown)
Line 6: Line 6:
 
{{#vardefine:restriction|2}}
 
{{#vardefine:restriction|2}}
 
{{infobox equipment
 
{{infobox equipment
|caption =  
+
|caption = User interface and load station
|materials = [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[Silicon|Si]]  
+
|materials = [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]], [[Amorphous Silicon|a-Si]]  
 
|mask =
 
|mask =
 
|size = 6" (150mm)
 
|size = 6" (150mm)
Line 18: Line 18:
 
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
 
|maintenance = [[{{PAGENAME}}#Maintenance | Maintenance]]
 
}}
 
}}
 
{{warning|This page has not been released yet.}}
 
  
 
<!-- Insert the tool description here -->
 
<!-- Insert the tool description here -->
The Applied Materials P5000 PECVD system is a multi-chamber Plasma Enhanced Chemical Vapor Deposition (PECVD) tool.  Chamber A is configured for highly conformal TEOS (SiO2) film deposition, but is not available for processing at this time.  Chamber B is configured for SiO2 and a-Si film deposition with boron and phosphorous doping options.  Chamber C is configured to deposit SiO2, Si3N4, and SiOxNy (oxynitride) films.  The tool has a cassette load station for 150mm diameter wafers.  Processing of 100mm diameter and smaller samples will be enabled by use of carrier wafers with a 100mm diameter recessed area.  Wafers are transferred to the process chambers and are processed one at a time with deposition on only the top side of the substrate.  Standard recipes operate at 200-400C. Substrate heating is accomplished by lamps located under the susceptor that the wafer rests on during processing. This system has a single frequency RF power source at 13.56MHz that is delivered to the chamber through an auto-matching network.
+
The Applied Materials P5000 PECVD system is a multi-chamber Plasma Enhanced Chemical Vapor Deposition ([[PECVD]]) tool with standard operating temperatures of 200-400C.  Chamber A is configured for highly conformal [[Tetraethyl orthosilicate|TEOS]] (SiO<sub>2</sub>) film deposition, but is not available for processing at this time due to lack of a chemical delivery cabinet.  Chamber B is configured for silicon dioxide [[Silicon dioxide|(SiO<sub>2</sub>)]] and amorphous silicon [[Amorphous Silicon|(a-Si)]] film deposition with boron and phosphorous doping options.  Chamber C is configured to deposit [[Silicon dioxide|SiO<sub>2</sub>]], [[Silicon Nitride|Si<sub>3</sub>N<sub>4</sub>]], and oxynitride ([[Oxynitride|SiO<sub>x</sub>N<sub>y</sub>]]) films.  Wafers are transferred to the process chambers and are processed one at a time with deposition on only the top side of the substrate.   
  
 
==Announcements==
 
==Announcements==
*Update this with announcements as necessary
+
*None at this time
  
 
==Capabilities==
 
==Capabilities==
 
<!--A more general description of what the tool is capable of doing.-->
 
<!--A more general description of what the tool is capable of doing.-->
* Etch Rate
+
<!--See System Overview and Supported Processes data below.-->
* Resolution
+
*High deposition rates for oxide, oxynitride and nitride films in the range of ~100-150Å/s.
* Aspect Ratio
+
*Lower processing temperatures (200-400°C) compared with typical furnace deposition temperatures (400-1100°C).
* Thickness range
+
 
 +
<!--==System Overview==
 +
'''Full system overview document can be found at:''' [https://docs.google.com/document/d/1Prm374eY-Wve4NbPmDy8i4fTEOGpgaSfCT-VfP_EYgM/edit?usp=sharing System_Overview]-->
  
==System Overview==
 
 
===Hardware Details===
 
===Hardware Details===
* Gases
+
* Gases/ MFC full range parameters by chamber:
* Pressure
+
**Chamber A:  NF3 = 1000 sccm, O2 = 600 sccm, C2F6 = 400 sccm, He = 1000 sccm, [[Tetraethyl orthosilicate|TEOS]] = 1.5 g/min (liquid flow meter)
* Chuck
+
**Chamber B:  H2 = 500 sccm, 5% PH3 in He = 400 sccm, 5% B2H6 in He = 200 sccm, CF4 = 5000 sccm, N2O = 2000 sccm, SiH4 = 300 sccm, He = 1000 sccm
* Chamber
+
**Chamber C:  N2O = 200 sccm, N2 = 5000 sccm, NF3 = 1000 sccm, NH3 = 100 sccm, SiH4 = 300 sccm, CF4 = 5000 sccm, N2O = 2000 sccm.
* RF / Power Specs
+
* Pressure Regulation: Closed loop via process chamber 10T baratron pressure gauge and foreline throttle valve
* Chemicals
+
* Single frequency RF – 1000 watts @ 13.56Mhz delivered to chambers through an auto-matching networks.
 +
 
 +
* Lamp heated for 200-400C process temperatures
  
 
===Substrate Requirements===
 
===Substrate Requirements===
* Wafer Size
+
* This tool has a cassette load station for 150mm diameter wafers.  Processing of 100mm diameter and smaller samples is enabled by use of carrier wafers with a 100mm diameter recessed area.  Do NOT use any mounting material (like Crystalbond, Santovac, etc).
* Wafer type
+
* 4" wafers and samples as thick as 1mm have been processed on carrier wafers without issue.  Wafers or samples thicker than standard wafer thicknesses will have higher deposition rates and slightly different film parameters than indicated in characterization data.
 +
<!--* Wafer type
 
* Any mounting?
 
* Any mounting?
* Wafer thickness
+
* Wafer thickness-->
  
 
===Material Restrictions===
 
===Material Restrictions===
 +
 +
* High Purity Fused Silica wafers are allowed as long as they have been processed through a pre-furnace clean in the old RCA Clean Bench 81 in bay 1440A with an extended 1 minute 10:1 HF etch.
 +
*Only the following metals are allowed as long as they have not been deposited in Lab18-01:  aluminum, titanium, molybdenum, tantalum, tungsten, nickel, platinum, and chromium
 +
 +
 
{{material restrictions}}
 
{{material restrictions}}
  
 
==Supported Processes==  
 
==Supported Processes==  
 +
There are several processes for this tool supported by the LNF.  Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress.  The chamber clean recipe etch rate for the film is also provided which is used when calculating your post deposition chamber clean time.
 +
 
<!-- We recommend creating a subpage detailing the supported processes for the tool, which will be generated if you leave the link below. Alternatively, you may include the information on this page. In that case, the Supported Processes document from the equipment manual can be included here, using {{#widget:GoogleDoc|key=googledocid}} -->
 
<!-- We recommend creating a subpage detailing the supported processes for the tool, which will be generated if you leave the link below. Alternatively, you may include the information on this page. In that case, the Supported Processes document from the equipment manual can be included here, using {{#widget:GoogleDoc|key=googledocid}} -->
 +
{{#widget:Iframe
 +
|url=https://docs.google.com/spreadsheets/d/1rDIYYd7TXexcGPmN7HhzT8KfQsmI0srYysldU1IIJMs/pubhtml?gid=0&single=true
 +
|width=1600
 +
|height=600
 +
|border=0
 +
}}
 +
 +
Additional information on Extended Clean recipes:
 +
 +
{{#widget:Iframe
 +
|url=https://docs.google.com/spreadsheets/d/1PEGiVjXa6UK394YppKvIiu-k0bkpiQoO3NtfqOeL8Dc/preview?usp=sharing
 +
|width=1600
 +
|height=600
 +
|border=0
 +
}}
 +
 +
=Information on film etch rates=
 +
At this time, only BHF etch rates for two nitride films have been determined and reported by researchers
 +
 +
Etch rates for nitride in BHF:
 +
*200C Nitride = 535 A/min
 +
*400C Tensile Nitride = 215 A/min
  
There are several processes for this tool supported by the LNF, which are described in more detail on the [[/Processes/]] page.
 
  
 
<!-- If you allow custom recipes, let users know to contact a tool engineer, and you may also create the link below which will create a page that users can add custom recipes to. -->
 
<!-- If you allow custom recipes, let users know to contact a tool engineer, and you may also create the link below which will create a page that users can add custom recipes to. -->
In addition to these, this tool has a number of user-created recipes for etching a wide variety of materials. Some of these recipes are documented on [[LNF User:{{BASEPAGENAME}} User Processes|{{BASEPAGENAME}} User Processes]]. If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system.
+
<!--In addition to these, this tool has a number of user-created recipes for etching a wide variety of materials. Some of these recipes are documented on [[LNF User:{{BASEPAGENAME}} User Processes|{{BASEPAGENAME}} User Processes]]. If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system.-->
  
 
==Standard Operating Procedure==
 
==Standard Operating Procedure==
 
<!-- To include a document from google docs, use the line below, replace "googledocid" with the ID for the document. Remember, to make this visible, you must set Sharing for the document to "Anyone with the link can view". -->
 
<!-- To include a document from google docs, use the line below, replace "googledocid" with the ID for the document. Remember, to make this visible, you must set Sharing for the document to "Anyone with the link can view". -->
{{#widget:GoogleDoc|key=googledocid}}
+
{{#widget:GoogleDoc|key=1sleh0Y8co0s_5QdgCfbnWJkYUScWc0FRmv2QgmaJgsE}}
  
 
==Checkout Procedure==
 
==Checkout Procedure==
 
<!-- Describe the checkout procedure for the tool. For example: -->
 
<!-- Describe the checkout procedure for the tool. For example: -->
# Read through this page and the Standard Operating Procedure above.
+
# Read through this page including the System Overview and the Standard Operating Procedure above.
# Complete the training request form [http://examplelink.com here].
+
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training.  Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample).  Please verify that your substrate material and materials already present on your sample are listed as approved materials in the System Overview.
# Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training.
+
# A tool engineer will contact you to arrange a time for initial training.
# A tool engineer will schedule a time for initial training.
+
# One or more of these training sessions will be required before a checkout session can be arranged to gain authorization on the tool.
# Practice with your mentor or another authorized user until you are comfortable with tool operation.
+
# Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
# Complete the SOP quiz [http://examplelink.com here].
 
# Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
 
  
==Tool Qualification==  
+
==Maintenance==  
 
<!-- Describe standard maintenance/qualification tests here -->
 
<!-- Describe standard maintenance/qualification tests here -->
 
+
*Chamber maintenance is performed on an as needed basis at this time.  As tool utilization increases, accumulation limits will be determined for each chamber.
===Process Name===
+
*Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes to check tool performance and film characteristics.
 +
<!--===Process Name===-->
 
<!-- This is an example a chart published with etch data. You can just replace the url with your own. -->
 
<!-- This is an example a chart published with etch data. You can just replace the url with your own. -->
{{#widget:Iframe
 
|url=chart url
 
|width=800
 
|height=400
 
|border=0
 
}}
 

Latest revision as of 14:16, 14 March 2021



P5000 PECVD
21051.jpg
User interface and load station
Equipment Details
Technology PECVD
Materials Restriction Semi-Clean
Material Processed SiO2, Si3N4, a-Si
Sample Size 6" (150mm)
Equipment Manual
Overview System Overview
Operating Procedure SOP
Supported Processes Supported Processes
User Processes User Processes
Maintenance Maintenance


The Applied Materials P5000 PECVD system is a multi-chamber Plasma Enhanced Chemical Vapor Deposition (PECVD) tool with standard operating temperatures of 200-400C. Chamber A is configured for highly conformal TEOS (SiO2) film deposition, but is not available for processing at this time due to lack of a chemical delivery cabinet. Chamber B is configured for silicon dioxide (SiO2) and amorphous silicon (a-Si) film deposition with boron and phosphorous doping options. Chamber C is configured to deposit SiO2, Si3N4, and oxynitride (SiOxNy) films. Wafers are transferred to the process chambers and are processed one at a time with deposition on only the top side of the substrate.

Announcements

  • None at this time

Capabilities

  • High deposition rates for oxide, oxynitride and nitride films in the range of ~100-150Å/s.
  • Lower processing temperatures (200-400°C) compared with typical furnace deposition temperatures (400-1100°C).


Hardware Details

  • Gases/ MFC full range parameters by chamber:
    • Chamber A: NF3 = 1000 sccm, O2 = 600 sccm, C2F6 = 400 sccm, He = 1000 sccm, TEOS = 1.5 g/min (liquid flow meter)
    • Chamber B: H2 = 500 sccm, 5% PH3 in He = 400 sccm, 5% B2H6 in He = 200 sccm, CF4 = 5000 sccm, N2O = 2000 sccm, SiH4 = 300 sccm, He = 1000 sccm
    • Chamber C: N2O = 200 sccm, N2 = 5000 sccm, NF3 = 1000 sccm, NH3 = 100 sccm, SiH4 = 300 sccm, CF4 = 5000 sccm, N2O = 2000 sccm.
  • Pressure Regulation: Closed loop via process chamber 10T baratron pressure gauge and foreline throttle valve
  • Single frequency RF – 1000 watts @ 13.56Mhz delivered to chambers through an auto-matching networks.
  • Lamp heated for 200-400C process temperatures

Substrate Requirements

  • This tool has a cassette load station for 150mm diameter wafers. Processing of 100mm diameter and smaller samples is enabled by use of carrier wafers with a 100mm diameter recessed area. Do NOT use any mounting material (like Crystalbond, Santovac, etc).
  • 4" wafers and samples as thick as 1mm have been processed on carrier wafers without issue. Wafers or samples thicker than standard wafer thicknesses will have higher deposition rates and slightly different film parameters than indicated in characterization data.

Material Restrictions

  • High Purity Fused Silica wafers are allowed as long as they have been processed through a pre-furnace clean in the old RCA Clean Bench 81 in bay 1440A with an extended 1 minute 10:1 HF etch.
  • Only the following metals are allowed as long as they have not been deposited in Lab18-01: aluminum, titanium, molybdenum, tantalum, tungsten, nickel, platinum, and chromium


The P5000 PECVD is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.


Supported Processes

There are several processes for this tool supported by the LNF. Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress. The chamber clean recipe etch rate for the film is also provided which is used when calculating your post deposition chamber clean time.

Additional information on Extended Clean recipes:

Information on film etch rates

At this time, only BHF etch rates for two nitride films have been determined and reported by researchers

Etch rates for nitride in BHF:

  • 200C Nitride = 535 A/min
  • 400C Tensile Nitride = 215 A/min


Standard Operating Procedure

Widget text will go here.

Checkout Procedure

  1. Read through this page including the System Overview and the Standard Operating Procedure above.
  2. Create a Helpdesk Ticket requesting training. Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample). Please verify that your substrate material and materials already present on your sample are listed as approved materials in the System Overview.
  3. A tool engineer will contact you to arrange a time for initial training.
  4. One or more of these training sessions will be required before a checkout session can be arranged to gain authorization on the tool.
  5. Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Maintenance

  • Chamber maintenance is performed on an as needed basis at this time. As tool utilization increases, accumulation limits will be determined for each chamber.
  • Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes to check tool performance and film characteristics.