|Material Processed||SiO2, Si3N4, a-Si|
|Sample Size||6" (150mm)|
|Supported Processes||Supported Processes|
|User Processes||User Processes|
The Applied Materials P5000 PECVD system is a multi-chamber Plasma Enhanced Chemical Vapor Deposition (PECVD) tool with standard operating temperatures of 200-400C. Chamber A is configured for highly conformal TEOS (SiO2) film deposition, but is not available for processing at this time. Chamber B is configured for silicon dioxide (SiO2) and amorphous silicon (a-Si) film deposition with boron and phosphorous doping options. Chamber C is configured to deposit SiO2, Si3N4, and oxynitride (SiOxNy) films.
- None at this time
- High deposition rates for oxide, oxynitride and nitride films in the range of ~100-150Å/s.
- Lower processing temperatures (200-400°C) compared with typical furnace deposition temperatures (400-1100°C).
Full system overview document can be found at: System_Overview
- Gases/ MFC full range parameters by chamber:
- Chamber A: NF3 = 1000 sccm, O2 = 600 sccm, C2F6 = 400 sccm, He = 1000 sccm, TEOS = 1.5 g/min (liquid flow meter)
- Chamber B: H2 = 500 sccm, 5% PH3 in N2 = 400 sccm, 5% B2H6 in He = 200 sccm, CF4 = 5000 sccm, N2O = 2000 sccm, SiH4 = 300 sccm, N2 = 1000 sccm
- Chamber C: N2O = 200 sccm, N2 = 5000 sccm, NF3 = 1000 sccm, NH3 = 100 sccm, SiH4 = 300 sccm, CF4 = 5000 sccm, N2O = 2000 sccm.
- Pressure Regulation: Closed loop via process chamber 10T baratron pressure gauge and foreline throttle valve
- Single frequency RF – 1000 watts @ 13.56Mhz
- Lamp heated for 200-400C process temperatures
- This tool has a cassette load station for 150mm diameter wafers. Processing of 100mm diameter and smaller samples is enabled by use of carrier wafers with a 100mm diameter recessed area. Do NOT use any mounting material (like Crystalbond, Santovac, etc).
- Substrate Materials:
- High Purity Fused Silica wafers as long as they have been processed through a pre-furnace clean in the old RCA Clean Bench 81 in bay 1440A.
The P5000 PECVD is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email email@example.com for any material requests or questions.
There are several processes for this tool supported by the LNF. Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress. The chamber clean recipe etch rate for the film is also provided which is used when calculating your post deposition chamber clean time.
Additional information on Extended Clean recipes:
Standard Operating Procedure
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- Read through this page including the System Overview and the Standard Operating Procedure above.
- Create a Helpdesk Ticket requesting training. Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample). Please verify that your substrate material and materials already present on your sample are listed as approved materials in the System Overview.
- A tool engineer will contact you to arrange a time for initial training.
- One or more of these training sessions will be required before a checkout session can be arranged to gain authorization on the tool.
- Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
- Chamber maintenance is performed on an as needed basis at this time. As tool utilization increases, accumulation limits will be determined for each chamber.
- Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes to check tool performance and film characteristics.