P5000 PECVD

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P5000 PECVD
21051.jpg
User interface and load station
Equipment Details
Technology PECVD
Materials Restriction Semi-Clean
Material Processed SiO2, Si3N4, a-Si
Sample Size 6" (150mm)
Equipment Manual
Overview System Overview
Operating Procedure SOP
Supported Processes Supported Processes
User Processes User Processes
Maintenance Maintenance


The Applied Materials P5000 PECVD system is a multi-chamber Plasma Enhanced Chemical Vapor Deposition (PECVD) tool with standard operating temperatures of 200-400C. Chamber A is configured for highly conformal TEOS (SiO2) film deposition, but is not available for processing at this time due to lack of a chemical delivery cabinet. Chamber B is configured for silicon dioxide (SiO2) and amorphous silicon (a-Si) film deposition with boron and phosphorous doping options. Chamber C is configured to deposit SiO2, Si3N4, and oxynitride (SiOxNy) films. Wafers are transferred to the process chambers and are processed one at a time with deposition on only the top side of the substrate.

Announcements

  • None at this time

Capabilities

  • High deposition rates for oxide, oxynitride and nitride films in the range of ~100-150Å/s.
  • Lower processing temperatures (200-400°C) compared with typical furnace deposition temperatures (400-1100°C).


Hardware Details

  • Gases/ MFC full range parameters by chamber:
    • Chamber A: NF3 = 1000 sccm, O2 = 600 sccm, C2F6 = 400 sccm, He = 1000 sccm, TEOS = 1.5 g/min (liquid flow meter)
    • Chamber B: H2 = 500 sccm, 5% PH3 in He = 400 sccm, 5% B2H6 in He = 200 sccm, CF4 = 5000 sccm, N2O = 2000 sccm, SiH4 = 300 sccm, He = 1000 sccm
    • Chamber C: N2O = 200 sccm, N2 = 5000 sccm, NF3 = 1000 sccm, NH3 = 100 sccm, SiH4 = 300 sccm, CF4 = 5000 sccm, N2O = 2000 sccm.
  • Pressure Regulation: Closed loop via process chamber 10T baratron pressure gauge and foreline throttle valve
  • Single frequency RF – 1000 watts @ 13.56Mhz delivered to chambers through an auto-matching networks.
  • Lamp heated for 200-400C process temperatures

Substrate Requirements

  • This tool has a cassette load station for 150mm diameter wafers. Processing of 100mm diameter and smaller samples is enabled by use of carrier wafers with a 100mm diameter recessed area. Do NOT use any mounting material (like Crystalbond, Santovac, etc).
  • 4" wafers and samples as thick as 1mm have been processed on carrier wafers without issue. Wafers or samples thicker than standard wafer thicknesses will have higher deposition rates and slightly different film parameters than indicated in characterization data.

Material Restrictions

  • High Purity Fused Silica wafers are allowed as long as they have been processed through a pre-furnace clean in the old RCA Clean Bench 81 in bay 1440A with an extended 1 minute 10:1 HF etch.
  • Only the following metals are allowed as long as they have not been deposited in Lab18-01: aluminum, titanium, molybdenum, tantalum, tungsten, nickel, platinum, and chromium


The P5000 PECVD is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.


Supported Processes

There are several processes for this tool supported by the LNF. Characterization data for these processes is captured in the table below, including deposition rate, within wafer non-uniformity percentage, refractive index, and film stress. The chamber clean recipe etch rate for the film is also provided which is used when calculating your post deposition chamber clean time.

Additional information on Extended Clean recipes:

Information on film etch rates

At this time, only BHF etch rates for two nitride films have been determined and reported by researchers

Etch rates for nitride in BHF:

  • 200C Nitride = 535 A/min
  • 400C Tensile Nitride = 215 A/min


Standard Operating Procedure

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Checkout Procedure

  1. Read through this page including the System Overview and the Standard Operating Procedure above.
  2. Create a Helpdesk Ticket requesting training. Please include information on your desired deposition process (films, thicknesses) and a description of your sample (substrate size, substrate material, and materials already present on your sample). Please verify that your substrate material and materials already present on your sample are listed as approved materials in the System Overview.
  3. A tool engineer will contact you to arrange a time for initial training.
  4. One or more of these training sessions will be required before a checkout session can be arranged to gain authorization on the tool.
  5. Request a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.

Maintenance

  • Chamber maintenance is performed on an as needed basis at this time. As tool utilization increases, accumulation limits will be determined for each chamber.
  • Following chamber maintenance, a monitor wafer is run on one of the LNF supported standard processes to check tool performance and film characteristics.