Difference between revisions of "P5000 RIE"
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| − | {{#vardefine:toolid|14051}}{{#vardefine:technology|RIE}}{{#vardefine:restriction|1}} | + | {{#vardefine:toolid|14051}}{{#vardefine:technology|RIE}}{{#vardefine:restriction|1}}{{ |
| − | {{infobox equipment | + | infobox equipment |
|caption = | |caption = | ||
|materials = [[Silicon dioxide|SiO<sub>2</sub>]] 3800 Å/min<br>[[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]<br>[[Polysilicon|Poly-Si]] 3800 Å/min | |materials = [[Silicon dioxide|SiO<sub>2</sub>]] 3800 Å/min<br>[[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]<br>[[Polysilicon|Poly-Si]] 3800 Å/min | ||
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}} | }} | ||
| − | The Applied Materials P5000 RIE system is a multi-chamber | + | The [[{{PAGENAME}}|Applied Materials P5000 RIE]] system is a multi-chamber [[reactive ion etching]] (RIE) tool. Chambers [[P5000 RIE/Chamber A|A]] and [[P5000 RIE/Chamber B|B]] are configured for Si based dielectric etching, including [[Silicon dioxide|SiO<sub>2</sub>]] and [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]. [[P5000 RIE/Chamber C|Chamber C]] is configured for etching [[polysilicon]] and [[silicon]] films. The tool has a cassette load station for 150 mm diameter wafers. Processing of 100 mm diameter and smaller samples is possible by [[Sample mounting|mounting]] samples to 150 mm carrier wafers. Wafers are transferred to the process chambers and are processed one at a time with etching on the top side of the substrate. This system has a single frequency RF power source at 13.56 MHz that is delivered to the chamber through an auto-matching network. |
==Announcements== | ==Announcements== | ||
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===Substrate Requirements=== | ===Substrate Requirements=== | ||
* A 150 mm carrier wafer must be used for 100 mm wafers and smaller pieces. For information on mounting techniques, please read about [[Sample Mounting]]. | * A 150 mm carrier wafer must be used for 100 mm wafers and smaller pieces. For information on mounting techniques, please read about [[Sample Mounting]]. | ||
| − | * Thickness: | + | * Thickness: Create a helpdesk ticket for any samples that are thicker than standard wafer thicknesses (675 µm +/-25 µm). |
* Substrate surfaces should be clean and free from particulates. Inadequate cleaning of the wafer backside will cause the process to abort and may result in loss of tool authorization. | * Substrate surfaces should be clean and free from particulates. Inadequate cleaning of the wafer backside will cause the process to abort and may result in loss of tool authorization. | ||
Revision as of 09:59, 14 August 2018
| P5000 RIE | |
|---|---|
 | |
| Equipment Details | |
| Manufacturer | Applied Materials |
| Model | Precision 5000 MxP Etch |
| Technology | RIE |
| Materials Restriction | CMOS Clean |
| Material Processed |
SiO2 3800 Å/min Si3N4 Poly-Si 3800 Å/min |
| Mask Materials | SiO2, PR |
| Sample Size | 150 mm* |
| Gases Used | varies by chamber |
| Equipment Manual | |
| Overview | System Overview |
| Operating Procedure | SOP |
| Supported Processes | Supported Processes |
| Maintenance | Maintenance |
| *Smaller samples may be mounted to a 6" carrier | |
The Applied Materials P5000 RIE system is a multi-chamber reactive ion etching (RIE) tool. Chambers A and B are configured for Si based dielectric etching, including SiO2 and Si3N4. Chamber C is configured for etching polysilicon and silicon films. The tool has a cassette load station for 150 mm diameter wafers. Processing of 100 mm diameter and smaller samples is possible by mounting samples to 150 mm carrier wafers. Wafers are transferred to the process chambers and are processed one at a time with etching on the top side of the substrate. This system has a single frequency RF power source at 13.56 MHz that is delivered to the chamber through an auto-matching network.
Contents
Announcements
Etch rates as of 6/9/17:
- Chamber B OXIDE_BKM: 4000 A/min +/- 1%, 3.5% nonuniformity (10mm EE)
- Chamber C POLYPATBKM: 3890 A/min +/- 1%, 3% nonuniformity (10mm EE)
Capabilities
Capabilities vary by chamber. Please see individual pages for each chamber.
System Overview
Hardware Details
- Single frequency RF – 1000 Watts @ 13.56 Mhz
- Temperature controlled electrostatic chuck
- Pressure Regulation: Closed loop via process chamber 1 Torr baratron pressure gauge and turbo pump throttle valve
Substrate Requirements
- A 150 mm carrier wafer must be used for 100 mm wafers and smaller pieces. For information on mounting techniques, please read about Sample Mounting.
- Thickness: Create a helpdesk ticket for any samples that are thicker than standard wafer thicknesses (675 µm +/-25 µm).
- Substrate surfaces should be clean and free from particulates. Inadequate cleaning of the wafer backside will cause the process to abort and may result in loss of tool authorization.
Material Restrictions
Material restrictions vary by chamber. Generally, Chamber A is designated "Semi-clean", while chambers B and C are "CMOS clean". Please see individual chamber pages for specific restrictions.
Supported Processes
There are three main characterized processes available for etching SiO2, Si3N4, and polysilicon. More details can be found on the Processes page.
If these processes will not suit your needs and you wish to create a custom recipe, please create a helpdesk ticket for assistance.
Standard Operating Procedure
Widget text will go here.
Checkout Procedure
- Read through this page and the Standard Operating Procedure above.
- Create a Helpdesk Ticket requesting training.
- A tool engineer will schedule a time for initial training.
- Practice with your mentor or another authorized user until you are comfortable with tool operation.
- Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
Tool Qualification
Supported processes are tested regularly to verify etch rate and uniformity.
