Difference between revisions of "P5000 RIE/Chamber A"
Jump to navigation
Jump to search
| Line 1: | Line 1: | ||
| − | + | {{#vardefine:toolid|14051}}{{#vardefine:technology|RIE}}{{#vardefine:restriction|2}}{{ | |
| − | {{#vardefine:toolid|14051}} | + | infobox equipment |
| − | |||
| − | {{#vardefine:technology|RIE}} | ||
| − | |||
| − | {{#vardefine:restriction|2}} | ||
| − | {{infobox equipment | ||
|toolname = Chamber A | |toolname = Chamber A | ||
|caption = | |caption = | ||
| Line 20: | Line 15: | ||
|model = Precision 5000 MxP Etch | |model = Precision 5000 MxP Etch | ||
}} | }} | ||
| − | |||
| − | |||
Chamber A is part of the Applied Materials [[P5000 RIE]] system. It is configured for Si based dielectric etching, including [[Silicon dioxide|SiO<sub>2</sub>]] and [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]. Please see the main tool page for more details including the SOP and training procedure. | Chamber A is part of the Applied Materials [[P5000 RIE]] system. It is configured for Si based dielectric etching, including [[Silicon dioxide|SiO<sub>2</sub>]] and [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]. Please see the main tool page for more details including the SOP and training procedure. | ||
| Line 49: | Line 42: | ||
===Substrate Requirements=== | ===Substrate Requirements=== | ||
| − | * A 150mm carrier wafer must be used for 100mm wafers and smaller pieces. For information on mounting techniques, please read about [[ | + | * A 150mm carrier wafer must be used for 100mm wafers and smaller pieces. For information on mounting techniques, please read about [[sample mounting]]. |
* Thickness: Do not process samples that are thicker than standard wafer thicknesses (675 µm +/-25 µm). | * Thickness: Do not process samples that are thicker than standard wafer thicknesses (675 µm +/-25 µm). | ||
* Substrate surfaces should be clean and free from particulates. Inadequate cleaning of the wafer backside will cause the process to abort and may result in loss of tool authorization. | * Substrate surfaces should be clean and free from particulates. Inadequate cleaning of the wafer backside will cause the process to abort and may result in loss of tool authorization. | ||
Revision as of 11:11, 14 August 2018
| P5000 RIE | |
|---|---|
| Chamber A | |
 | |
| Equipment Details | |
| Manufacturer | Applied Materials |
| Model | Precision 5000 MxP Etch |
| Technology | RIE |
| Materials Restriction | Semi-Clean |
| Material Processed |
SiO2 3800 Å/min Si3N4 |
| Mask Materials | PR |
| Sample Size | 150 mm* |
| Gases Used |
N2 O2 Ar C4F8 CHF3 CF4 C2H2 |
| Equipment Manual | |
| Overview | System Overview |
| Supported Processes | Supported Processes |
| Maintenance | Maintenance |
| *Smaller samples may be mounted to a 6" carrier | |
Chamber A is part of the Applied Materials P5000 RIE system. It is configured for Si based dielectric etching, including SiO2 and Si3N4. Please see the main tool page for more details including the SOP and training procedure.
Contents
Capabilities
- Etch Rate
- Wafer to wafer average etch rate variation: ±2%
- Within wafer etch rate non-uniformity: < ±5%
- Maximum depth and aspect ratio dependent on feature size. For more details, please see the supported processes.
System Overview
Hardware Details
- Single frequency RF – 1000 Watts @ 13.56 Mhz
- Temperature controlled electrostatic chuck: 20°C
- Pressure Regulation: Closed loop via process chamber 1 Torr baratron pressure gauge and turbo pump throttle valve
- Gases
Substrate Requirements
- A 150mm carrier wafer must be used for 100mm wafers and smaller pieces. For information on mounting techniques, please read about sample mounting.
- Thickness: Do not process samples that are thicker than standard wafer thicknesses (675 µm +/-25 µm).
- Substrate surfaces should be clean and free from particulates. Inadequate cleaning of the wafer backside will cause the process to abort and may result in loss of tool authorization.
Material Restrictions
The P5000 RIE/Chamber A is designated as a Semi-Clean class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.
Approved materials
Supported Processes
There are several processes for etching SiO2 and Si3N4 that are supported on Chamber A. For more details, see the P5000 RIE/Processes page.
