Difference between revisions of "PMGI SF 6"

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{{#ifeq: {{PMGI SF 6}} | Template | | [[Category:Processes]]}}
 
{{#ifeq: {{PMGI SF 6}} | Template | | [[Category:Processes]]}}
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|technology = Lift-off
 
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<!-- Give a brief description of what the process does here, this should only be a a couple sentences -->
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PGMI SF 6 is a lift-off resist polydimethylglutarimide (PMGI) that is desinged for lift-off process and sacrificial release layers. It is used in combination with conventional photo resist to create and undercut or step feature facilitating clean and easy liftoff minimizing, or eliminating stringers and edge roughness. PGMI dissolves in [[Remover PG]]. [[Acetone]] can be used to dissolve the PR layer and do the initial liftoff but [[Remover PG]] must be used to remove the SF 6. It is always recomened to do a double bath of [[Remover PG]] followed by IPA, and then water rinses.
 +
==Announcements==
 +
On 1/18/22 our contact aingers were re calibrated. This may increase the exposure time on those tools by up to 22%. This wiki page will be updated after we have verified the new exposure information.
  
<!-- Give a brief description of what the process does here, this should only be a a couple sentences -->
 
PGMI SF 6 is a lift-off resist polydimethylglutarimide (PMGI) that is desinged for lift-off process and sacrificial release layers. It is used in combination with conventional photo resist to create and undercut or step feature facilitating clean and easy liftoff minimizing, or eliminating stringers and edge roughness.
 
 
==Procedure==
 
==Procedure==
 
===Notes===
 
===Notes===
*These recipes are for 2um contact resolution and 1um stepper resolution.
+
*These recipes are for 3500Å (2000rpm open lid and 1500rmp closed lid) of SF6, allowing you to lift off upto 2625Å of metal.  
*These recipes will be for 3500Å (2000rpm open lid and 1500rmp closed lid) of SF6, allowing you to lift off upto 2800Å of metal.  
+
*These are all for Si. Other materials will have different reflections and this may impact the required exposures.
*These are all for Si. Other materials will have different reflections and this may impact the required exposures.  
+
*You can spin thicker or thinner but you may need to adjust your develop/exposure time and this will affect your minimum distance between features.
*The thickness of the SF affects the required exposure time for the stepper and contact alingers.
+
 
*The thickness of the SF6 affects the 955 swing curve so deviating from this thickness for stepper exposure can have unexpected results.
 
 
===Process===
 
===Process===
*Spin SF 6 on CEE 100 at desired speed.
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*Spin SF 6 on CEE 100
 +
**2K for open lid for 3500Å
 +
**1.5k for closed lid for 3500Å
 
*Bake for 5min at 190°C, lid down on hotplates in 1440C
 
*Bake for 5min at 190°C, lid down on hotplates in 1440C
 
====Contact Aligners====
 
====Contact Aligners====
 +
These recipes are for 2um spacing between features.
 +
 
'''SPR  220 3.0 process'''  
 
'''SPR  220 3.0 process'''  
 
*Spin SPR 220 3.0
 
*Spin SPR 220 3.0
 
**3K spin  
 
**3K spin  
**3um RRD on the ACS
+
**3um RRD no HMDS on the ACS
 
*Bake at 115°C for 90 seconds
 
*Bake at 115°C for 90 seconds
 
*Expose for 7 seconds
 
*Expose for 7 seconds
 +
*Bake a 115°C for 90 seconds
 
*Develop
 
*Develop
**30 sec MIF 300 spray develop on the ACS
+
**30 sec AZ 300 spray develop on the ACS
 
**DP 25-25 726 puddle develop on the CEE developers
 
**DP 25-25 726 puddle develop on the CEE developers
  
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*Expose 4.0-4.5 seconds with 20 mJ/sec broad band light
 
*Expose 4.0-4.5 seconds with 20 mJ/sec broad band light
 
*Develop
 
*Develop
**30 sec MIF 300 spray develop on the ACS
+
**30 sec AZ 300 spray develop on the ACS
 
**DP 20-20 726 puddle develop on the CEE developers
 
**DP 20-20 726 puddle develop on the CEE developers
  
 
====Stepper====
 
====Stepper====
Coming soon.
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*Spin SPR 955
 +
**0.97um RRD no HMDS on the ACS
 +
*Expose, 0.3 sec, -5F
 +
*PEB 110°C 90 sec
 +
*Develop
 +
**25sec AZ 300 spray develop on the ACS
 +
**DP 15-15 726 puddle develop on the CEE developers
  
 
==Characterization==
 
==Characterization==
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|url=https://docs.google.com/spreadsheets/d/e/2PACX-1vSWa2yexkWso5aSQevv9Zk1RtvePfiv52m13iRLsTWm1WdsX1k4Mj7-a5dxEIqDr1G1GMEf7vLlx8ZA/pubchart?oid=817075509&format=image
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|url=https://docs.google.com/spreadsheets/d/e/2PACX-1vSWa2yexkWso5aSQevv9Zk1RtvePfiv52m13iRLsTWm1WdsX1k4Mj7-a5dxEIqDr1G1GMEf7vLlx8ZA/pubchart?oid=496696783&format=interactive
 
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Spray Develop
 
Spray Develop
  
[[File:1813_spray_develop.jpeg|borderless|600px]]
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[[File:1813 spray develop.jpeg|borderless|600px]]
  
 
Puddle Develop
 
Puddle Develop
  
 
[[File:1813_puddle_develop.jpeg|borderless|600px]]
 
[[File:1813_puddle_develop.jpeg|borderless|600px]]
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===Exposure Matrix===
 +
 +
[[File:955 on SF6 exposure matrix.jpg|borderless|600px]]
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===Focus Matrix===
 +
[[File:955 on SF6 focus matrix at 0,30.jpg|borderless|600px]]
  
 
==Limitations==
 
==Limitations==
<!-- List any process limitations here -->
+
The metal should only be 75% of the thickness of the lift-off resist. For 3500Å of SF 6, your metal stack should be 2625Å or thinner.
  
==Qualification==
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==Data Sheets==
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
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[[https://drive.google.com/file/d/17B5Pkmwb9k04vtC-XL_s4x7PXHLzeGjL/view?usp=sharing| Technical Data Sheet]]

Latest revision as of 16:23, 10 March 2022


About this Process
Process Details
Equipment PMGI SF 6
Technology Lift-off


PGMI SF 6 is a lift-off resist polydimethylglutarimide (PMGI) that is desinged for lift-off process and sacrificial release layers. It is used in combination with conventional photo resist to create and undercut or step feature facilitating clean and easy liftoff minimizing, or eliminating stringers and edge roughness. PGMI dissolves in Remover PG. Acetone can be used to dissolve the PR layer and do the initial liftoff but Remover PG must be used to remove the SF 6. It is always recomened to do a double bath of Remover PG followed by IPA, and then water rinses.

Announcements

On 1/18/22 our contact aingers were re calibrated. This may increase the exposure time on those tools by up to 22%. This wiki page will be updated after we have verified the new exposure information.

Procedure

Notes

  • These recipes are for 3500Å (2000rpm open lid and 1500rmp closed lid) of SF6, allowing you to lift off upto 2625Å of metal.
  • These are all for Si. Other materials will have different reflections and this may impact the required exposures.
  • You can spin thicker or thinner but you may need to adjust your develop/exposure time and this will affect your minimum distance between features.

Process

  • Spin SF 6 on CEE 100
    • 2K for open lid for 3500Å
    • 1.5k for closed lid for 3500Å
  • Bake for 5min at 190°C, lid down on hotplates in 1440C

Contact Aligners

These recipes are for 2um spacing between features.

SPR 220 3.0 process

  • Spin SPR 220 3.0
    • 3K spin
    • 3um RRD no HMDS on the ACS
  • Bake at 115°C for 90 seconds
  • Expose for 7 seconds
  • Bake a 115°C for 90 seconds
  • Develop
    • 30 sec AZ 300 spray develop on the ACS
    • DP 25-25 726 puddle develop on the CEE developers

1813 Process

  • Spin 1813 at 4K spin (recipe #4 on CEE spinners)
  • Bake for @110°C for 4 min on hotplate
  • Expose 4.0-4.5 seconds with 20 mJ/sec broad band light
  • Develop
    • 30 sec AZ 300 spray develop on the ACS
    • DP 20-20 726 puddle develop on the CEE developers

Stepper

  • Spin SPR 955
    • 0.97um RRD no HMDS on the ACS
  • Expose, 0.3 sec, -5F
  • PEB 110°C 90 sec
  • Develop
    • 25sec AZ 300 spray develop on the ACS
    • DP 15-15 726 puddle develop on the CEE developers

Characterization

Spin Curve

PMGI SF 6 spin curve on CEE 100.

Affects of develop time

1813/LOR System

Spray Develop

borderless

Puddle Develop

borderless

Exposure Matrix

borderless

Focus Matrix

borderless

Limitations

The metal should only be 75% of the thickness of the lift-off resist. For 3500Å of SF 6, your metal stack should be 2625Å or thinner.

Data Sheets

[Technical Data Sheet]