Difference between revisions of "PMMA A4 4krpm"
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===Exposure=== | ===Exposure=== | ||
Exposure is performed on the [[JEOL JBX-6300FS Electron Beam Lithography System|JEOL E-Beam]]. Exposure dosage will depend on the materials on the sample and feature size. The standard exposure on [[silicon]] is {{em|650{{nbsp}}μC/cm<sup>2</sup>}}. For an oxide film, this can be increased to {{em|675{{nbsp}}μC/cm<sup>2</sup>}}. For large or varied features, the tool supports [[proximity correction]]. | Exposure is performed on the [[JEOL JBX-6300FS Electron Beam Lithography System|JEOL E-Beam]]. Exposure dosage will depend on the materials on the sample and feature size. The standard exposure on [[silicon]] is {{em|650{{nbsp}}μC/cm<sup>2</sup>}}. For an oxide film, this can be increased to {{em|675{{nbsp}}μC/cm<sup>2</sup>}}. For large or varied features, the tool supports [[proximity correction]]. | ||
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| + | {| class="wikitable" border="1" | ||
| + | |- | ||
| + | ! Feature | ||
| + | ! Substrate material | ||
| + | ! Recommended dose (μC/cm<sup>2</sup>) | ||
| + | ! Minimum feature | ||
| + | |- | ||
| + | | Proximity corrected | ||
| + | | Silicon | ||
| + | | 650 | ||
| + | | | ||
| + | |- | ||
| + | | Proximity corrected | ||
| + | | Silicon dioxide | ||
| + | | 675 | ||
| + | | | ||
| + | |- | ||
| + | | Isolated lines | ||
| + | | Silicon | ||
| + | | | ||
| + | | | ||
| + | |- | ||
| + | | Isolated trenches | ||
| + | | Silicon | ||
| + | | | ||
| + | | | ||
| + | |} | ||
<!--{{note|For assistance characterizing exposure dose, please create a [https://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:52011 helpdesk ticket].}}--> | <!--{{note|For assistance characterizing exposure dose, please create a [https://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:52011 helpdesk ticket].}}--> | ||
Latest revision as of 09:13, 17 May 2016
 Warning: | This page has not been released yet. |
| About this Process | |
|---|---|
| Process Details | |
| Equipment | PMMA A4 4krpm |
| Technology | Electron beam lithography |
| Material | PMMA |
| Chemicals Used | MIBK |
| Date Created | 5/16/2016 |
| Authored By | Kevin Owen |
PMMA A4 4krpm is a standard process using PMMA A4 to produce a 200 nm thick mask with electron beam lithography.
Contents
Procedure
Photoresist spin and soft bake
The photoresist spin and bake should be performed at the E-Beam Spinner/Hot-Plate Bench.
- Start the bench and let the hot plate heat to 180°C
- Mount the correct chuck, depending on sample size, onto the spinner
- Load the 4krpm 45sec recipe for 4" samples
- Load sample and check centering
- Dispense PMMA A4 using a pipette and click Start Process
- Once the spin is complete, transfer to hotplate at 180°C for 180 sec
Exposure
Exposure is performed on the JEOL E-Beam. Exposure dosage will depend on the materials on the sample and feature size. The standard exposure on silicon is 650 μC/cm2. For an oxide film, this can be increased to 675 μC/cm2. For large or varied features, the tool supports proximity correction.
| Feature | Substrate material | Recommended dose (μC/cm2) | Minimum feature |
|---|---|---|---|
| Proximity corrected | Silicon | 650 | |
| Proximity corrected | Silicon dioxide | 675 | |
| Isolated lines | Silicon | ||
| Isolated trenches | Silicon |
For assistance characterizing exposure dose, please create a helpdesk ticket.
Development
PMMA is developed with MIBK in the E-Beam Solvent Bench.
- Develop sample in a 1:3 mixture of MIBK:IPA for 60 sec
- Rinse sample in IPA for 30 sec
- Blow the sample dry with a N2 gun
Capabilities
Describe what this recipe can be used for (e.g. feature size limits).
Uniformity
Add thickness map for 4" wafer
