Difference between revisions of "PVD 75 Proline"

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{{infobox equipment
 
{{infobox equipment
 
|restriction = [[{{PAGENAME}}#Material_Restrictions|Semi-Clean]]
 
|restriction = [[{{PAGENAME}}#Material_Restrictions|Semi-Clean]]
|materials = [[Aluminum|Al]],[[Al2O3|Al<sub>2</sub>O<sub>3</sub>]],[[Chromium|Cr]],[[Copper|Cu]],[[Nickel|Ni]],[[Silicon|Si]],[[Silicon Dioxide|SiO<sub>2</sub>]],[[Silver|Ag]],[[Titanium|Ti]]
+
|materials = [[Aluminum|Al]], [[Al2O3|Al<sub>2</sub>O<sub>3</sub>]], [[Chromium|Cr]], [[Copper|Cu]],[[Nickel|Ni]], [[Silicon|Si]], [[Silicon Dioxide|SiO<sub>2</sub>]], [[Silicon Nitride|Si<sub>3</sub>N<sub>4</sub>]], [[Silver|Ag]],[[Titanium|Ti]]
 
|mask =  
 
|mask =  
 
|size = 150mm x 4mm and smaller samples
 
|size = 150mm x 4mm and smaller samples
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| 5000 Å / 1 µm
 
| 5000 Å / 1 µm
 
|--->
 
|--->
<!--| Silicon Dioxide ([[Silicon Dioxide|SiO<sub>2</sub>]])
+
| Silicon Dioxide ([[Silicon Dioxide|SiO<sub>2</sub>]])
 
| 5000 Å / 1 µm
 
| 5000 Å / 1 µm
|--->
+
|
<!--| Silicon Nitride ([[Silicon Nitride|Si<sub>3</sub>N<sub>4</sub>]])
+
| Silicon Nitride ([[Silicon Nitride|Si<sub>3</sub>N<sub>4</sub>]])
 
| 5000 Å / 1 µm
 
| 5000 Å / 1 µm
|--->
+
|
 
<!--| Tantalum ([[Tantalum|Ta]])
 
<!--| Tantalum ([[Tantalum|Ta]])
 
| 2000 Å / NA
 
| 2000 Å / NA

Revision as of 08:23, 11 May 2017

< Sputter deposition

PVD 75 Proline
87001.jpg
Equipment Details
Technology PVD
Materials Restriction Metals
Material Processed Al, Al2O3, Cr, Cu,Ni, Si, SiO2, Si3N4, Ag,Ti
Sample Size 150mm x 4mm and smaller samples
Gases Used Ar, N2, O2
Equipment Manual


The PVD 75 Proline is a magnetron sputter deposition tool for depositing conductive metallic and non conductive dielectric films. Sputter deposition is achieved by bombarding a source material with energetic ions, typically Ar+. Atoms at the surface of the target are knocked loose, and transported to the surface of the substrate, where deposition occurs. Electrically conductive material such as Al, W, and Ti can use a dc power source, in which the target acts as the cathode in a diode system. Sputtering of dielectrics such as silicon dioxide, or aluminum oxide requires an Rf power source to supply energy to the argon atoms. Sputter films are ideal for sidewall coverage in low thermal budget cases for contact and insulating layers over features.

Announcements

  • The target change process on this tool is a user supported process. That can be completed during the tool reservation when the chamber is vented to load samples.

Capabilities

  • Computer controlled recipes
  • Non load lock configuration
  • limited film stress versatility with in film development.
  • Reactive film capabilities (Ar, O2, and N2)

System Overview

The PVD 75 has a 14" square-shaped chamber high vacuum process chamber. The tools four Tourus Mag Kepper magnetron sputtering sources are set up to allow for RF, DC, Pulse DC and DC co-sputtering. There is an additional Rf power supply on the substrate platen to allow for in situ sample cleans, and bias voltage to manipulate the film characteristics. Sample heating up to 350°C is achieved by using the tools quartz heater lamps.

Hardware Details

  • Cryo pumped chamber – upper 10-7 Torr base pressure
  • Chamber capacity: single wafer
  • Configured with port for future load lock
  • Sample heating – up to 350°C
    • Four 3” Sputtering Guns
    • 2 DC (one pulse DC source) and 2 RF power supply (one for sample RF bias)

Substrate Requirements

  • Sample sizes: pieces, up to 6” wafers.
  • Wafer holders available for 2", 3", 4", 6"; as well as clip fixtures for smaller pieces
    • Diameter 150 mm maximum
    • Substrates up to 4 mm Thick. With special fixture up to 8 mm.
    • Sample Mounting

Material Restrictions

The PVD 75 Proline is designated as a Metals class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.


Supported Processes

Basic "User" access with the Lab 18's provide researchers the ability to load, transfer samples, and deposit standard characterized materials. For more details, see PVD 75 Proline/Processes.

In addition to these, this tool has a number of user-supported recipes for depositing a wide variety of materials. Some of these recipes are documented on User Processes. Wondering if your material can be deposited in this tool, please contact the tool engineers via the helpdesk ticket system. See the more about privately supported materials on the LNF Sputtering Adding New Films page.

Process Name

Multiple staff characterized films are available. If two thicknesses are listed the first is for per run and the second thickness is for total material used per reservation.

Material Max thickness (Run/Reservation)
Aluminum (Al) 1 µm / NA
Alumina/Aluminum Oxide (Al2O3) 1000Å / NA
Chrome (Cr) 2000Å / NA
Copper (Cu) 1000Å / 5000Å
Nickel (Ni) 5000 Å / 1 µm
Silver (Ag) 5000 Å / 1 µm
Silicon Dioxide (SiO2) 5000 Å / 1 µm Silicon Nitride (Si3N4) 5000 Å / 1 µm Titanium (Ti) 2000 Å / 5000 Å
Tungsten (W) 3000 Å / 9000 Å
Tungsten/Titanium (W-Ti) 3000 Å / 8000 Å

Standard Operating Procedure

Widget text will go here.

Checkout Procedure

The PVD 75 is on the LNF Scheduler. LNF constituents may reserve time on the tool, and even request staff support for process development. For more details, see Lab 18 access and training.

  1. Complete the following items
  2. Create a helpdesk ticket requesting training.
  3. A tool engineer will schedule a time for initial training.
  4. Practice with your mentor or another authorized user until you are comfortable with tool operation.
  5. Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.


Maintenance

For more details, see PVD 75 Proline/Maintenance and qualification.