Difference between revisions of "PVD 75 Proline"
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{{infobox equipment | {{infobox equipment | ||
|restriction = [[{{PAGENAME}}#Material_Restrictions|Semi-Clean]] | |restriction = [[{{PAGENAME}}#Material_Restrictions|Semi-Clean]] | ||
− | |materials = [[Aluminum|Al]],[[Al2O3|Al<sub>2</sub>O<sub>3</sub>]],[[Chromium|Cr]],[[Copper|Cu]],[[Nickel|Ni]],[[Silicon|Si]],[[Silicon Dioxide|SiO<sub>2</sub>]],[[Silver|Ag]],[[Titanium|Ti]] | + | |materials = [[Aluminum|Al]], [[Al2O3|Al<sub>2</sub>O<sub>3</sub>]], [[Chromium|Cr]], [[Copper|Cu]],[[Cobalt|Co]],[[Iron|Fe]], [[Nickel|Ni]],[[Molybdenum|Mo]], [[Silicon|Si]], [[Silicon Dioxide|SiO<sub>2</sub>]], [[Silicon Nitride|Si<sub>3</sub>N<sub>4</sub>]], [[Silver|Ag]],[[Titanium|Ti]],[[Tungsten|W]] |
|mask = | |mask = | ||
|size = 150mm x 4mm and smaller samples | |size = 150mm x 4mm and smaller samples | ||
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}} | }} | ||
<!-- Insert the tool description here --> | <!-- Insert the tool description here --> | ||
− | The PVD 75 Proline is a magnetron [[sputter deposition]] tool for depositing conductive metallic and non conductive dielectric films. Sputter deposition is achieved by bombarding a source material with energetic ions, typically Ar+. Atoms at the surface of the target are knocked loose, and transported to the surface of the substrate, where deposition occurs. Electrically conductive material such as Al, W, and Ti can use a dc power source, in which the target acts as the cathode in a diode system. Sputtering of dielectrics such as silicon dioxide, or aluminum oxide requires an Rf power source to supply energy to the argon atoms. Sputter films are ideal for sidewall coverage in low thermal budget cases for contact and insulating layers over features. | + | The PVD 75 Proline is a magnetron [[sputter deposition]] tool for depositing conductive metallic and non conductive dielectric films. The PVD 75 tool is designed specifically for '''point of use processing of materials not allowed or not currently in the Lab 18 tools.''' Sputter deposition is achieved by bombarding a source material with energetic ions, typically Ar+. Atoms at the surface of the target are knocked loose, and transported to the surface of the substrate, where deposition occurs. Electrically conductive material such as Al, W, and Ti can use a dc power source, in which the target acts as the cathode in a diode system. Sputtering of dielectrics such as silicon dioxide, or aluminum oxide requires an Rf power source to supply energy to the argon atoms. Sputter films are ideal for sidewall coverage in low thermal budget cases for contact and insulating layers over features. |
==Announcements== | ==Announcements== | ||
<!-- *Update this with announcements as necessary --> | <!-- *Update this with announcements as necessary --> | ||
− | |||
− | == | + | {{#widget:Iframe |
− | + | |url=https://docs.google.com/spreadsheets/d/e/2PACX-1vRlmI6w0KI2KXYHH8xyUxhCIDwpUBR0qohNJR61GuVr64OLT9rNYjGCAQ0o9XEGKd2QPwqdJ6uVdsB4/pubhtml?gid=1886308597&single=true&widget=true&headers=false | |
− | + | |width=900 | |
− | + | |height=600 | |
− | + | |border=0 | |
+ | }} | ||
− | + | [https://docs.google.com/spreadsheets/d/1yMY0SG8PDlF4UWxz96uJVnmP9mcxYr0wGc1xmzmgF48/edit#gid=1242670380| Materials immediately available Link] | |
− | |||
− | === | + | ==Capabilities== |
− | |||
− | |||
− | |||
− | |||
− | |||
− | |||
− | + | *Computer controlled recipes | |
− | + | *Non load lock configuration | |
− | * | + | *limited film stress versatility with in film development. |
− | * | + | *Reactive film capabilities (Ar, O<sub>2</sub>, and N<sub>2</sub>) |
− | * | ||
− | * | ||
− | == | + | ==Supported Processes== |
− | {{ | + | *[[{{BASEPAGENAME}}/Processes]] |
− | |||
Basic "User" access with the Lab 18's provide researchers the ability to load, transfer samples, and deposit standard characterized materials. For more details, see [[{{BASEPAGENAME}}/Processes]]. | Basic "User" access with the Lab 18's provide researchers the ability to load, transfer samples, and deposit standard characterized materials. For more details, see [[{{BASEPAGENAME}}/Processes]]. | ||
− | In addition to these, this tool has a number of user-supported recipes for depositing a wide variety of materials. Some of these recipes are documented on User Processes. | + | In addition to these, this tool has a number of user-supported recipes for depositing a wide variety of materials. Some of these recipes are documented on User Processes. |
+ | |||
+ | If you have a material deposition need that is not listed, check to see if this material is deposited on another PVD tool or see more about options for running your own private material on the [[LNF PVD Films|LNF PVD Films]] page. The PVD 75 Proline is the preferred sputtering tool for non-standard materials. See how to [http://lnf-wiki.eecs.umich.edu/wiki/LNF_PVD_Films#Requesting_to_Add_New_PVD_Materials Request New PVD Films] here. See more on how to request new sputter sources specifically on the [https://lnf-wiki.eecs.umich.edu/wiki/LNF_Sputter_Adding_New_Films LNF Sputter Adding New Films] page. | ||
===Process Name=== | ===Process Name=== | ||
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{| class="wikitable" border="1" | {| class="wikitable" border="1" | ||
|- | |- | ||
− | ! Material | + | !Material |
− | ! Max thickness (Run/Reservation) | + | !Max thickness (Run/Reservation) |
− | ! | + | ! |
|- | |- | ||
− | | Aluminum ([[Aluminum|Al]]) | + | |Aluminum ([[Aluminum|Al]]) |
− | | 1 µm | + | |3000Å / 1 µm |
|- | |- | ||
− | | Alumina/Aluminum Oxide ([[Al2O3|Al<sub>2</sub>O<sub>3</sub>]]) | + | |Alumina/Aluminum Oxide ([[Al2O3|Al<sub>2</sub>O<sub>3</sub>]]) |
− | | | + | |500Å / 3000Å |
|- | |- | ||
− | | | + | |Chromium ([[Chromium|Cr]]) |
− | | | + | |3000Å / 9000Å |
|- | |- | ||
− | | Copper ([[Copper|Cu]]) | + | <!--| Copper ([[Copper|Cu]]) |
| 1000Å / 5000Å | | 1000Å / 5000Å | ||
− | |- | + | |---> |
<!--| Germanium ([[Germanium|Ge]]) | <!--| Germanium ([[Germanium|Ge]]) | ||
| 4000 Å / NA | | 4000 Å / NA | ||
Line 84: | Line 76: | ||
| 5000Å / NA | | 5000Å / NA | ||
|---> | |---> | ||
+ | |Iron ([[Iron|Fe]]) | ||
+ | |2000Å / 6000Å | ||
|- | |- | ||
− | + | |Nickel ([[Nickel|Ni]]) | |
− | + | |2000 Å / 6000Å | |
− | |||
− | | Nickel ([[Nickel|Ni]]) | ||
− | | | ||
|- | |- | ||
− | + | | Molybdenum ([[Molybdenum|Mo]]) | |
− | | | + | | 3000 Å / 8000 Å |
|---> | |---> | ||
− | |||
<!--| Platinum ([[Platinum|Pt]]) | <!--| Platinum ([[Platinum|Pt]]) | ||
| 5000 Å / 1 µm | | 5000 Å / 1 µm | ||
|---> | |---> | ||
+ | |Silver ([[Silver|Ag]]) | ||
+ | |3000 Å / 6000Å | ||
+ | |- | ||
+ | |Silicon ([[Silicon|Si]]) | ||
+ | |3000 Å / 6000Å | ||
|- | |- | ||
− | | | + | |Silicon Dioxide ([[Silicon Dioxide|SiO<sub>2</sub>]]) |
− | | | + | |1000 Å / 3000Å |
+ | |- | ||
+ | |Silicon Nitride ([[Silicon Nitride|Si<sub>3</sub>N<sub>4</sub>]]) | ||
+ | |500 Å / 1000Å | ||
|- | |- | ||
− | |||
− | |||
− | |||
− | |||
− | |||
− | |||
− | |||
− | |||
− | |||
<!--| Tantalum ([[Tantalum|Ta]]) | <!--| Tantalum ([[Tantalum|Ta]]) | ||
| 2000 Å / NA | | 2000 Å / NA | ||
|---> | |---> | ||
− | | Titanium ([[Titanium|Ti]]) | + | |Titanium ([[Titanium|Ti]]) |
− | | | + | |3000 Å / 6000 Å |
|- | |- | ||
<!--| Titanium Dioxide ([[Titanium Dioxide|TiO<sub>2</sub>]]) | <!--| Titanium Dioxide ([[Titanium Dioxide|TiO<sub>2</sub>]]) | ||
| 2000 Å / 5000 Å | | 2000 Å / 5000 Å | ||
|---> | |---> | ||
− | | Tungsten ([[Tungsten|W]]) | + | |Tungsten ([[Tungsten|W]]) |
− | | 3000 Å / 9000 Å | + | |3000 Å / 9000 Å |
|- | |- | ||
− | | Tungsten/Titanium ([[Tungsten/Titanium|W-Ti]]) | + | <!--| Tungsten/Titanium ([[Tungsten/Titanium|W-Ti]]) |
| 3000 Å / 8000 Å | | 3000 Å / 8000 Å | ||
− | |- | + | |---> |
|} | |} | ||
+ | |||
+ | ==System Overview== | ||
+ | The PVD 75 has a 14" square-shaped chamber high vacuum process chamber. The tools four Tourus Mag Kepper magnetron sputtering sources are set up to allow for RF, DC, Pulse DC and DC co-sputtering. There is an additional Rf power supply on the substrate platen to allow for in situ sample cleans, and bias voltage to manipulate the film characteristics. Sample heating up to 350°C is achieved by using the tools quartz heater lamps. The average run time on this tool per wafer is about two hours. | ||
+ | |||
+ | ===Hardware Details=== | ||
+ | |||
+ | *Cryo pumped chamber – lower 10<sup>-6</sup> Torr base pressure | ||
+ | *Chamber capacity: single wafer | ||
+ | *Configured with port for future load lock | ||
+ | *Sample heating – up to 350°C | ||
+ | **Four 3” Sputtering Guns | ||
+ | **2 DC (one pulse DC source) and 2 RF power supply (one for sample RF bias) | ||
+ | |||
+ | ===Substrate Requirements=== | ||
+ | |||
+ | *Sample sizes: pieces, up to 6” wafers. | ||
+ | *Wafer holders available for 2", 3", 4", 6"; as well as clip fixtures for smaller pieces | ||
+ | **Diameter 150 mm maximum | ||
+ | **Substrates up to 4 mm Thick. With special fixture up to 8 mm. | ||
+ | **[https://docs.google.com/document/d/1p8k5awL8j_HvGESUDsE80uE2obIYRb_8AiQzlfoDT3Q/edit#|Sputter Sample Mounting] | ||
+ | |||
+ | ===Material Restrictions=== | ||
+ | {{material restrictions}} | ||
==Standard Operating Procedure== | ==Standard Operating Procedure== | ||
<!-- To include a document from google docs, use the line below, replace "googledocid" with the ID for the document. Remember, to make this visible, you must set Sharing for the document to "Anyone with the link can view". --> | <!-- To include a document from google docs, use the line below, replace "googledocid" with the ID for the document. Remember, to make this visible, you must set Sharing for the document to "Anyone with the link can view". --> | ||
− | {{#widget:GoogleDoc|key= | + | {{#widget:GoogleDoc|key=1vf2enLWa1qMT0sAis9bUFoyuTnNjLszRxbj0Rkh4trw}} |
==Checkout Procedure== | ==Checkout Procedure== | ||
− | + | For more details, see [[KJLC Sputter Tool Access and Training]]. | |
− | + | # Complete the online [https://rise.articulate.com/share/Ao7oMeRC8efjEeqElzqlBiPE6uyJ9y-T#/ PVD Rise Training] (this only needs to completed once so if you are authorized on another PVD tool or sputter tool, you do not need to do it again.) | |
− | For more details, see [[ | + | # Read through this Wiki page and the Operating Procedure above. |
− | # Complete the | + | # Create a [http://ssel-sched.eecs.umich.edu/sselScheduler/ResourceContact.aspx?tabindex=3&path=0:0:0:{{#var:toolid}} Helpdesk Ticket] requesting training |
− | + | # A tool engineer or user services member will contact you for a training session. | |
− | |||
− | |||
− | # | ||
− | # | ||
− | |||
− | |||
− | |||
− | # A tool engineer will | ||
# Practice with your mentor or another authorized user until you are comfortable with tool operation. | # Practice with your mentor or another authorized user until you are comfortable with tool operation. | ||
− | + | # Complete the [https://docs.google.com/forms/d/e/1FAIpQLSejdgAcE9d7_fgmUWHDxykaoB4GpflVnP9anXV2gMXnoUscGw/viewform?embedded=true#start=embed| PVD 75 User Training Quiz] | |
− | # Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool. | + | # Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool at the "user" level. |
− | |||
− | |||
− | |||
==Maintenance== | ==Maintenance== | ||
For more details, see [[{{BASEPAGENAME}}/Maintenance and qualification]]. | For more details, see [[{{BASEPAGENAME}}/Maintenance and qualification]]. |
Latest revision as of 12:44, 5 December 2023
PVD 75 Proline | |
---|---|
Equipment Details | |
Technology | PVD |
Materials Restriction | Metals |
Material Processed | Al, Al2O3, Cr, Cu,Co,Fe, Ni,Mo, Si, SiO2, Si3N4, Ag,Ti,W |
Sample Size | 150mm x 4mm and smaller samples |
Gases Used | Ar, N2, O2 |
Equipment Manual | |
The PVD 75 Proline is a magnetron sputter deposition tool for depositing conductive metallic and non conductive dielectric films. The PVD 75 tool is designed specifically for point of use processing of materials not allowed or not currently in the Lab 18 tools. Sputter deposition is achieved by bombarding a source material with energetic ions, typically Ar+. Atoms at the surface of the target are knocked loose, and transported to the surface of the substrate, where deposition occurs. Electrically conductive material such as Al, W, and Ti can use a dc power source, in which the target acts as the cathode in a diode system. Sputtering of dielectrics such as silicon dioxide, or aluminum oxide requires an Rf power source to supply energy to the argon atoms. Sputter films are ideal for sidewall coverage in low thermal budget cases for contact and insulating layers over features.
Contents
Announcements
Materials immediately available Link
Capabilities
- Computer controlled recipes
- Non load lock configuration
- limited film stress versatility with in film development.
- Reactive film capabilities (Ar, O2, and N2)
Supported Processes
Basic "User" access with the Lab 18's provide researchers the ability to load, transfer samples, and deposit standard characterized materials. For more details, see PVD 75 Proline/Processes.
In addition to these, this tool has a number of user-supported recipes for depositing a wide variety of materials. Some of these recipes are documented on User Processes.
If you have a material deposition need that is not listed, check to see if this material is deposited on another PVD tool or see more about options for running your own private material on the LNF PVD Films page. The PVD 75 Proline is the preferred sputtering tool for non-standard materials. See how to Request New PVD Films here. See more on how to request new sputter sources specifically on the LNF Sputter Adding New Films page.
Process Name
Multiple staff characterized films are available. If two thicknesses are listed the first is for per run and the second thickness is for total material used per reservation.
Material | Max thickness (Run/Reservation) | |
---|---|---|
Aluminum (Al) | 3000Å / 1 µm | |
Alumina/Aluminum Oxide (Al2O3) | 500Å / 3000Å | |
Chromium (Cr) | 3000Å / 9000Å | |
Iron (Fe) | 2000Å / 6000Å | |
Nickel (Ni) | 2000 Å / 6000Å | |
Molybdenum (Mo) | 3000 Å / 8000 Å | |
Silver (Ag) | 3000 Å / 6000Å | |
Silicon (Si) | 3000 Å / 6000Å | |
Silicon Dioxide (SiO2) | 1000 Å / 3000Å | |
Silicon Nitride (Si3N4) | 500 Å / 1000Å | |
Titanium (Ti) | 3000 Å / 6000 Å | |
Tungsten (W) | 3000 Å / 9000 Å |
System Overview
The PVD 75 has a 14" square-shaped chamber high vacuum process chamber. The tools four Tourus Mag Kepper magnetron sputtering sources are set up to allow for RF, DC, Pulse DC and DC co-sputtering. There is an additional Rf power supply on the substrate platen to allow for in situ sample cleans, and bias voltage to manipulate the film characteristics. Sample heating up to 350°C is achieved by using the tools quartz heater lamps. The average run time on this tool per wafer is about two hours.
Hardware Details
- Cryo pumped chamber – lower 10-6 Torr base pressure
- Chamber capacity: single wafer
- Configured with port for future load lock
- Sample heating – up to 350°C
- Four 3” Sputtering Guns
- 2 DC (one pulse DC source) and 2 RF power supply (one for sample RF bias)
Substrate Requirements
- Sample sizes: pieces, up to 6” wafers.
- Wafer holders available for 2", 3", 4", 6"; as well as clip fixtures for smaller pieces
- Diameter 150 mm maximum
- Substrates up to 4 mm Thick. With special fixture up to 8 mm.
- Sample Mounting
Material Restrictions
The PVD 75 Proline is designated as a Metals class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.
Standard Operating Procedure
Widget text will go here.
Checkout Procedure
For more details, see KJLC Sputter Tool Access and Training.
- Complete the online PVD Rise Training (this only needs to completed once so if you are authorized on another PVD tool or sputter tool, you do not need to do it again.)
- Read through this Wiki page and the Operating Procedure above.
- Create a Helpdesk Ticket requesting training
- A tool engineer or user services member will contact you for a training session.
- Practice with your mentor or another authorized user until you are comfortable with tool operation.
- Complete the PVD 75 User Training Quiz
- Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool at the "user" level.
Maintenance
For more details, see PVD 75 Proline/Maintenance and qualification.