Difference between revisions of "Photoresist"

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Photoresist is a photoactive polymer suspended in a solvent used in [[Lithography]] processing.  We have positive novolak based resists for use with our mask aligners and stepper, negative epoxy based resists ..... and e-beam resists for use with the JOEL.
 
Photoresist is a photoactive polymer suspended in a solvent used in [[Lithography]] processing.  We have positive novolak based resists for use with our mask aligners and stepper, negative epoxy based resists ..... and e-beam resists for use with the JOEL.
  
==LNF Supported Photoresists==
 
===UV Exposure===
 
* SPR 220
 
** SPR 220 (3.0) is stocked in the cleanroom, SPR 220 (7.0) can be purchased from the store
 
* SPR 955
 
** SPR 955 (0.9) can be purchased in the store
 
* S1800
 
** 1813 is stocked in the cleanroom and can be purchased from the store
 
* KMPR
 
** KMPR 1010 and 1025 can be purchased from the store
 
* SU-8
 
** ???
 
 
 
===E-Beam===
 
* ZEP
 
* PMMA 450
 
* PMMA 950
 
  
  

Revision as of 09:59, 26 June 2018

Photoresist is a photoactive polymer suspended in a solvent used in Lithography processing. We have positive novolak based resists for use with our mask aligners and stepper, negative epoxy based resists ..... and e-beam resists for use with the JOEL.


Applications

Etch

RIE

A photoresist used in RIE needs to be thermally stable and resistant to the etch chemistry.

  • SPR 220 - 3µm of SPR 220 is the most common etch mask at the LNF.
  • SPR 955 - 0.97µm of SPR 955 allows a higher resolution then SPR 220 when a thinner mask is acceptable.
  • KMPR - KMPR is a negative epoxy based photoresist with a very good etch resistance, but is more difficult to pattern and remove.
  • ZEP - This is an e-beam photoresist that generally has much better etch resistance then PMMA
  • PMMA 950 - PMMA can be used as an RIE mask, but will generally etch several times faster then the SPR series.

Wet Etch

A photoresists adhesion is very important as any adhesion failure greatly increases undercut.

  • S1800 - XXX of 1813 is our standard wet etch mask due to XXX

Deposition

Lift Off

Liftoff needs a photoresist profile that prevents sidewall deposition. Often this is done by using a bi-layer stack and undercutting the bottom layer.

  • 1813 on LOR
  • PMMA 950 on PMMA 450

Plating

Molding

Below you can find a list of public and private approved photoresists for the LNF. If you would like to bring a new photoresist into the robin lab or clean room, then please create a help desk ticket or email info@lnf.umich.edu. All photoresists must be handled using the green polychloroprene gloves.

Announcements

  • None at this time.

Photoresist Table

Photoresists
Photoresist LNF/Private Tool +/-/Reversible Stored Notes
950K PMMA 6% LNF E-Beam Spinner ? Photoresist cabinet 1440C; 1480 photoresist -
AZ5214-E (IR) Private Not using +, Reversible No longer stored -
AZ9260 Sold through store ? + ? Thick photoresist, high resolution
KMPR 1010 Private CEE 100CB Spinner - ? UV, E-beam, x-ray, contact aligner
KMPR 1025 Private CEE 100CB Spinner - ? UV, E-beam, or x-ray
LOR 10B Lift-Off Resist Private CEE 100CB Spinner - ? -
Omni Coat ? ? ? ? -
S1813 LNF CEE 100 and CEE 200 Spinners + Photoresist cabinet 1440C -
SC1827 LNF/discontinued CEE 100 and CEE 200 Spinners + Photoresist cabinet 1440C -
SPR 220-3.0 LNF ACS 200 Cluster Tool, CEE 100 and CEE 200 Spinners + Photoresist cabinet 1440C -
SPR 220-7.0 LNF/Private CEE 100 and CEE 200 Spinners + Photoresist cabinet 1440C LNF provides the photoresist for the CEE 200CB Spinner #1, but it must be purchased if you want to use it on the CEE 100CB Spinner
SPR 955-0.9 LNF ACS 200 Cluster Tool, CEE 100 and CEE 200 Spinners + Photoresist cabinet 1440C Thinner viscosity, higher resolution
SU-8 2010 ? ROBIN Lab - Epoxy photoresist for micromachining
SU-8 2005 ? ROBIN Lab - Epoxy photoresist for micromachining
SU-8 2050 ? ROBIN Lab - Epoxy photoresist for micromachining