Difference between revisions of "Piranha Etch"

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==Locations==
 
==Locations==
*[[Acid Bench 02|Acid Bench 02]]
+
*[[Acid Bench 02|Acid Bench 02]] CMOS Clean 4" and 6" Silicon
*[[Acid Bench 12|Acid Bench 12]]
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*[[Acid Bench 12|Acid Bench 12]] Metals allowed 4" and 6" Silicon and Glass
*[[Acid Bench 72|Acid Bench 72]]
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*[[Acid Bench 72|Acid Bench 72]] Pieces to 6" wafers any material
*[[Acid Bench 73|Acid Bench 73]]
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*[[Acid Bench 73|Acid Bench 73]] Pieces to 6" wafers any material
  
 
==Characterization==
 
==Characterization==

Revision as of 13:01, 13 May 2015

Warning Warning: This page has not been released yet.
About this Process
Process Details
Equipment Piranha Etch
Technology [[]]
Chemicals Used Sulfuric Acid, Hydrogen Peroxide
Date Created 5/12/15
Date Modified 5/12/15
Authored By Rob Hower



Chemicals

  • Hydrogen Peroxide
  • Sulfuric Acid

Locations

Characterization

Etch/Dep Rate

Mask Selectivity

Limitations