Difference between revisions of "Piranha Etch"

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==Chemicals==
 
==Chemicals==
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*[[Sulfuric Acid|https://docs.google.com/a/lnf.umich.edu/file/d/0B8WeTTMTotIfV2pXRlhLVDBSTnVDdFhyU1JKZlFqUQ/edit]]
 
*Hydrogen Peroxide
 
*Hydrogen Peroxide
*Sulfuric Acid
 
  
 
==Locations==
 
==Locations==
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===Etch/Dep Rate===
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===Etch Rate===
 
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Will clean organic residue off of wafer in approximately 10-20 min
  
 
===Mask Selectivity===
 
===Mask Selectivity===
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==Limitations==
 
==Limitations==
 
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Will attack any polymers on the surface

Revision as of 13:09, 13 May 2015

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About this Process
Process Details
Equipment Piranha Etch
Technology [[]]
Chemicals Used Sulfuric Acid, Hydrogen Peroxide
Date Created 5/12/15
Date Modified 5/12/15
Authored By Rob Hower



Chemicals

Locations

Characterization

Etch Rate

Will clean organic residue off of wafer in approximately 10-20 min

Mask Selectivity

Limitations

Will attack any polymers on the surface