Difference between revisions of "Piranha Etch"

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*[[https://docs.google.com/a/lnf.umich.edu/file/d/0B8WeTTMTotIfV2pXRlhLVDBSTnVDdFhyU1JKZlFqUQ/preview]|Sulfuric Acid]
*[[https://docs.google.com/a/lnf.umich.edu/file/d/0B8WeTTMTotIfV2pXRlhLVDBSTnVDdFhyU1JKZlFqUQ/preview] Sulfuric Acid]}
*Hydrogen Peroxide
*Hydrogen Peroxide

Revision as of 13:11, 13 May 2015

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About this Process
Process Details
Equipment Piranha Etch
Technology [[]]
Chemicals Used Sulfuric Acid, Hydrogen Peroxide
Date Created 5/12/15
Date Modified 5/12/15
Authored By Rob Hower



Etch Rate

Will clean organic residue off of wafer in approximately 10-20 min

Mask Selectivity


Will attack any polymers on the surface